64 Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 The SST38VF6401/6402/6403/6404 are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) devices manufactured with proprietary, high-perfor- mance CMOS Super- Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401/6402/6403/6404 write (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pin assignments for x16 memories. Features Organized as 4M x16 Fast Erase Times: Sector-Erase Time: 18 ms (typical) Single Voltage Read and Write Operations Block-Erase Time: 18 ms (typical) Chip-Erase Time: 40 ms (typical) 2.7-3.6V Erase-Suspend/-Resume Capabilities Superior Reliability Endurance: 100,000 Cycles minimum Fast Word and Write-Buffer Programming Times: Greater than 100 years Data Retention3 Word-Program Time: 7 s (typical) Low Power Consumption (typical values at 5 MHz) Write Buffer Programming Time: 1.75 s / Word (typical) - 16-Word Write Buffer Active Current: 4 mA (typical) Standby Current: 3 A (typical) Automatic Write Timing Auto Low Power Mode: 3 A (typical) Internal V Generation PP 128-bit Unique ID End-of-Write Detection Security-ID Feature Toggle Bits 256 Word, user One-Time-Programmable Data Polling RY/BY Output Protection and Security Features CMOS I/O Compatibility Hardware Boot Block Protection/WP Input Pin, Uni- form (32 KWord) and Non-Uniform (8 KWord) options JEDEC Standard available User-controlled individual block (32 KWord) protection, Flash EEPROM Pinouts and command sets using software only methods Password protection CFI Compliant Hardware Reset Pin (RST ) Packages Available 48-lead TSOP Fast Read and Page Read Access Times: 48-ball TFBGA 90 ns Read access time 25 ns Page Read access times All devices are RoHS compliant - 4-Word Page Read buffer Latched Address and Data 2015-2018 Microchip Technology Inc DS20005015D64 Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404 Product Description The SST38VF6401, SST38VF6402, SST38VF6403, and SST38VF6404 devices are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with proprietary, high-perfor- mance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401/ 6402/6403/6404 write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories. Featuring high performance Word-Program, the SST38VF6401/6402/6403/6404 provide a typical Word- Program time of 7 sec. For faster word-programming performance, the Write-Buffer Programming feature, has a typical word-program time of 1.75 sec. These devices use Toggle Bit or Data Polling to indicate Program operation completion. In addition to single-word Read, Advanced MPF+ devices provide a Page-Read feature that enables a faster word read time of 25 ns, for words on the same page. To protect against inadvertent write, the SST38VF6401/6402/6403/6404 have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of appli- cations, these devices are available with 100,000 cycles minimum endurance. Data retention is rated at greater than 100 years. The SST38VF6401/6402/6403/6404 are suited for applications that require the convenient and econom- ical updating of program, configuration, or data memory. For all system applications, Advanced MPF+ significantly improve performance and reliability, while lowering power consumption. These devices inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. For any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time therefore, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration stor- age applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore, the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. The SST38VF6401/6402/6403/6404 also offer flexible data protection features. Applications that require memory protection from program and erase operations can use the Boot Block, Individual Block Protection, and Advanced Protection features. For applications that require a permanent solu- tion, the Irreversible Block Locking feature provides permanent protection for memory blocks. To meet high-density, surface mount requirements, the SST38VF6401/6402/6403/6404 devices are offered in 48-lead TSOP and 48-ball TFBGA packages. See Figures 2 and 3 for pin assignments and Table 1 for pin descriptions. 2015-2018 Microchip Technology Inc DS20005015D 2