1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose Flash (MPF) devices manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnel- ing injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories Features Organized as 128K x8 / 256K x8 / 512K x8 Fast Erase and Byte-Program Sector-Erase Time: 18 ms (typical) Single 4.5-5.5V Read and Write Operations Chip-Erase Time: 70 ms (typical) Byte-Program Time: 14 s (typical) Superior Reliability Chip Rewrite Time: 2 seconds (typical) for SST39SF010A Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention 4 seconds (typical) for SST39SF020A 8 seconds (typical) for SST39SF040 Low Power Consumption (typical values at 14 MHz) End-of-Write Detection Active Current: 10 mA (typical) Toggle Bit Standby Current: 30 A (typical) Data Polling Sector-Erase Capability TTL I/O Compatibility Uniform 4 KByte sectors JEDEC Standard Fast Read Access Time: Flash EEPROM Pinouts and command sets 55 ns 70 ns Packages Available 32-lead PLCC Latched Address and Data 32-lead TSOP (8mm x 14mm) 32-pin PDIP Automatic Write Timing All devices are RoHS compliant Internal V Generation PP 2002-2016 www.microchip.com DS20005022C 04/161 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet Product Description The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SSTs propri- etary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tun- neling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A/020A/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39SF010A/020A/040 devices provide a maximum Byte-Program time of 20 sec. These devices use Toggle Bit or Data Polling to indicate the comple- tion of Program operation. To protect against inadvertent write, they have on-chip hardware and Soft- ware Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39SF010A/020A/040 devices are suited for applications that require convenient and econom- ical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during erase and program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro- gram times increase with accumulated Erase/Program cycles. To meet high density, surface mount requirements, the SST39SF010A/020A/040 are offered in 32-lead PLCC and 32-lead TSOP packages. A 600 mil, 32-pin PDIP is also available. See Figures 2, 3, and 4 for pin assignments. 2002-2016 DS20005022C 04/16 2