1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040 Data Sheet The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SSTs proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain bet- ter reliability and manufacturability compared with alternate approaches. The SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories. Features Organized as 128K x8 / 256K x8 / 512K x8 Fast Erase and Byte-Program: Sector-Erase Time: 18 ms (typical) Single Voltage Read and Write Operations Chip-Erase Time: 70 ms (typical) 3.0-3.6V for SST39LF010/020/040 Byte-Program Time: 14 s (typical) 2.7-3.6V for SST39VF010/020/040 Chip Rewrite Time: 2 seconds (typical) for SST39LF/VF010 Superior Reliability 4 seconds (typical) for SST39LF/VF020 Endurance: 100,000 Cycles (typical) 8 seconds (typical) for SST39LF/VF040 Greater than 100 years Data Retention Automatic Write Timing Low Power Consumption Internal V Generation PP (typical values at 14 MHz) Active Current: 5 mA (typical) End-of-Write Detection Standby Current: 1 A (typical) Toggle Bit Data Polling Sector-Erase Capability Uniform 4 KByte sectors CMOS I/O Compatibility Fast Read Access Time: JEDEC Standard 55 ns for SST39LF010/020/040 Flash EEPROM Pinouts and command sets 70 ns for SST39VF010/020/040 Packages Available Latched Address and Data 32-lead PLCC 32-lead TSOP (8mm x 14mm) All devices are RoHS compliant 2012 Silicon Storage Technology, Inc. www.microchip.com DS25023B 06/131 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040 Data Sheet Product Description The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SSTs proprie- tary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tun- neling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39LF010/020/040 and SST39VF010/020/040 devices provide a maximum Byte-Program time of 20 sec. These devices use Toggle Bit or Data Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, they are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39LF010/020/040 and SST39VF010/020/040 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system appli- cations, they significantly improves performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro- gram times increase with accumulated Erase/Program cycles. To meet surface mount requirements, the SST39LF010/020/040 and SST39VF010/020/040 devices are offered in 32-lead PLCC and 32-lead TSOP packages. See Figures 2 and 3 for pin assignments. 2012 Silicon Storage Technology, Inc. DS25023B 06/13 2