Not recommended for new designs. Please use SST38VF6401/6402/6403/6404. 64 Mbit (x16) Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B Not Recommended for New Designs The SST39VF6401B / SST39VF6402B devices are 4M x16, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injec- tor attain better reliability and manufacturability compared with alternate approaches. The SST39VF6401B / SST39VF6402B write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories and are command set compatible with other Flash devices, enabling customers to save time and resources in implementation. Features Organized as 4M x16 Fast Read Access Time: 70 ns Single Voltage Read and Write Operations Latched Address and Data 2.7-3.6V Superior Reliability Fast Erase and Word-Program: Endurance: 100,000 Cycles (Typical) Sector-Erase Time: 18 ms (typical) Greater than 100 years Data Retention Block-Erase Time: 18 ms (typical) Chip-Erase Time: 40 ms (typical) Low Power Consumption (typical values at 5 MHz) Word-Program Time: 7 s (typical) Active Current: 9 mA (typical) Automatic Write Timing Standby Current: 3 A (typical) Auto Low Power Mode: 3 A (typical) Internal V Generation PP Hardware Block-Protection/WP Input Pin End-of-Write Detection Top Block-Protection (top 32 KWord) Toggle Bits for SST39VF6402B Data Polling Bottom Block-Protection (bottom 32 KWord) for SST39VF6401B CMOS I/O Compatibility Sector-Erase Capability JEDEC Standard Uniform 2 KWord sectors Flash EEPROM Pin Assignments Software command sequence compatibility Block-Erase Capability - Address format is 11 bits, A -A 10 0 - Block-Erase 6th Bus Write Cycle is 30H Uniform 32 KWord blocks - Sector-Erase 6th Bus Write Cycle is 50H Chip-Erase Capability Packages Available Erase-Suspend/Erase-Resume Capabilities 48-lead TSOP (12mm x 20mm) 48-ball TFBGA (8mm x 10mm) Hardware Reset Pin (RST ) All devices are RoHS compliant Security-ID Feature Microchip: 128 bits User: 128 bits 2015-2018 www.microchip.com DS20005008C64 Mbit Multi-Purpose Flash Plus SST39VF6401B / SST39VF6402B Not Recommended for New Designs Product Description The SST39VF640xB devices are 4M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick- oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF640xB write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories. Featuring high performance Word-Program, the SST39VF640xB devices provide a typical Word-Pro- gram time of 7 sec. These devices use Toggle Bit or Data Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39VF640xB devices are suited for applications that require convenient and economical updat- ing of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro- gram times increase with accumulated Erase/Program cycles. To meet high-density, surface mount requirements, the SST39VF640xB devices are offered in 48-lead TSOP and 48-ball TFBGA packages. See Figures 22 and 3 for pin assignments. 2015-2018 DS20005008C 2