X-On Electronics has gained recognition as a prominent supplier of TC4627EPA Gate Drivers across the USA, India, Europe, Australia, and various other global locations. TC4627EPA Gate Drivers are a product manufactured by Microchip. We provide cost-effective solutions for Gate Drivers, ensuring timely deliveries around the world.

TC4627EPA Microchip

TC4627EPA electronic component of Microchip
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Part No.TC4627EPA
Manufacturer: Microchip
Category: Gate Drivers
Description: Gate Drivers 1.5A W/Boost N-Inv
Datasheet: TC4627EPA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.2732 ea
Line Total: USD 9.27 
Availability - 138
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
138
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 9.2732
120 : USD 7.7433
540 : USD 7.0186

   
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We are delighted to provide the TC4627EPA from our Gate Drivers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TC4627EPA and other electronic components in the Gate Drivers category and beyond.

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TC4626/TC4627 Power CMOS Drivers With Voltage Tripler Features: General Description: Power Driver With On-Board Voltage Booster The TC4626/TC4627 are single CMOS high-speed drivers with an on-board voltage boost circuit. These Low I : < 4 mA DD parts work with an input supply voltage from 4 to 6 volts. Small Package: 8-Pin PDIP The internal voltage booster will produce a V BOOST Undervoltage Circuitry potential up to 12 volts above V . This V is not IN BOOST Fast Rise/Fall Time: <40 ns 1000 pF regulated, so its voltage is dependent on the input V DD Below-Rail Input Protection voltage and output drive loading requirements. An internal undervoltage lockout circuit keeps the output in a low state when V drops below 7.8 volts. Output Applications: BOOST is enabled when V is above 11.3 volts. BOOST Raises 5V to drive higher Vgs (ON) MOSFETs Eliminates one system power supply Note: Check the Microchip web site for available package types and package information. Package Type PDIP/CERDIP SOIC - - V 1 8 C1 1 16 V C1 DD DD + IN 2 2 7 NC 15 NC C1 TC4626 + NC C1 3 C2 3 6 V 14 BOOST TC4627 NC GND OUT 4 IN 4 5 13 TC4626 TC4627 NC C2 5 12 V NC 6 11 BOOST NC 7 10 NC GND OUT 8 9 Functional Block Diagram 2 V BOOST (Unregulated 3 x V ) 6 C1+ DD + EXT C 1 1 EXT + C1- C 3 3 Voltage C2 + EXT Booster UV LOCK V = 2 x V DD C 2 Noninverting 5 Output 8 V Clock DD 7 I0 Inverting GND 4 NOTE: Pin numbers correspond to 8-pin package. 2001-2014 Microchip Technology Inc. DS20001426D-page 1 4 4 TC4626/TC4627 Notice: Stresses above those listed under Absolute Maxi- 1.0 ELECTRICAL mum Ratings may cause permanent damage to the device. CHARACTERISTICS These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Absolute Maximum Ratings Exposure to Absolute Maximum Rating conditions for Supply Voltage ......................................................6.2V extended periods may affect device reliability. Input Voltage, Any Terminal .....................................V + 0.3V to GND 0.3V S Package Power Dissipation (T 70C) A PDIP........................................................730 mW CERDIP...................................................800 mW SOIC .......................................................760 mW Derating Factor PDIP .......5.6 mW/C Above 36C CERDIP...............................................6.0 mW/C Operating Temperature Range (Ambient) C Version.........................................0C to +70C E Version......................................-40C to +85C M Version ...................................-55C to +125C Storage Temperature Range ..............-65C to +150C TC4626/TC4627 ELECTRICAL SPECIFICATIONS Electrical Characteristics: T = +25C, V = 5V, C = C = C 10F unless otherwise noted. A DD 1 2 3 Parameter Symbol Min. Typ. Max. Units Test Conditions Input Logic 1, High Input Voltage V 2.4 V IH Logic 0, Low Input Voltage 0.8 V V IL Input Current -1 +1 A 0V V V I IN DRIVE IN Output High Output Voltage V 0.025 V V BOOST OH Low Output Voltage V 0.025 V OL Output Resistance, High 10 15 I = 10 mA, V = 5V R OUT DD O Output Resistance, Low 8 10 I = 10 mA, V = 5V R OUT DD O Peak Output Current I 1.5 A PK Switching Time Rise Time t 33 40 ns Figure 3-1, Figure 3-2 R Fall Time 27 35 ns Figure 3-1, Figure 3-2 t F Delay Time 35 45 ns Figure 3-1, Figure 3-2 t D1 Delay Time t 45 55 ns Figure 3-1, Figure 3-2 D2 Maximum Switching Frequency 1.0 MHz V = 5V, V > 8.5V, F DD BOOST MAX Figure 3-1 Voltage Booster Voltage Tripler Output 300 400 I = 10mA, V = 5V R L DD 3 Source Resistance Voltage Doubler Output 120 200 R 2 Source Resistance Oscillator Frequency F 12 28 kHz OSC Oscillator Amplitude Measured 4.5 10 V R = 10 k V LOAD OSC at C1- Undervoltage Threshold 7.0 7.8 8.5 V UV V BOOST Start-Up Voltage V 10.5 11.3 12 V START V BOOST DS20001426D-page 2 2001-2014 Microchip Technology Inc.

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