TC682EOA713 Microchip

TC682 Inverting Voltage Doubler Features: General Description: 99.9% Voltage Conversion Efficiency The TC682 is a CMOS charge pump converter that provides an inverted doubled output from a single 92% Power Conversion Efficiency positive supply. An on-board 12 kHz (typical) oscillator Wide Input Voltage Range: provides the clock and only 3 external capacitors are - +2.4V to +5.5V required for full circuit implementation. Only 3 External Capacitors Required Low output source impedance (typically 140 ), 185 A Supply Current provides output current up to 10 mA. The TC682 fea- Space-Saving 8-Pin SOIC and 8-Pin PDIP tures low quiescent current and high efficiency, making Packages it the ideal choice for a wide variety of applications that require a negative voltage derived from a single Applications: positive supply (for example: generation of -6V from a 3V lithium cell or -10V generated from a +5V logic -10V from +5V Logic Supply supply). -6V from a Single 3V Lithium Cell The minimum external parts count and small physical Portable Handheld Instruments size of the TC682 make it useful in many medium- Cellular Phones current, dual voltage analog power supplies. LCD Display Bias Generator Panel Meters Functional Block Diagram Operational Amplifier Power Supplies +2.4V < V < +5.5V IN V IN Device Selection Table V IN Operating Part + C 1 Package Temp. + Number C 1 Range C 1 TC682COA 8-Pin SOIC 0C to +70C TC682 TC682CPA 8-Pin PDIP 0C to +70C + C + 2 C V = -(2 x V ) TC682EOA 8-Pin SOIC -40C to +85C 2 OUT IN V OUT V C OUT 2 TC682EPA 8-Pin PDIP -40C to +85C GND C OUT + GND All Caps = 3.3 F Package Type 8-Pin PDIP 8-Pin SOIC C 1 8 NC 1 8 C NC 1 1 + + + + C C 2 7 C 2 7 C 2 1 2 1 TC682COA TC682CPA TC682EOA TC682EPA V 3 6 3 6 V C IN C IN 2 2 V V 4 5 4 5 GND GND OUT OUT 2002-2012 Microchip Technology Inc. DS21453D-page 1TC682 *Stresses above those listed under Absolute 1.0 ELECTRICAL Maximum Ratings may cause permanent damage to CHARACTERISTICS the device. These are stress ratings only and functional operation of the device at these or any other conditions Absolute Maximum Ratings* above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute V .......................................................................+5.8V IN Maximum Rating conditions for extended periods may V dV/dT ........................................................ 1V/sec IN affect device reliability. V ...................................................................-11.6V OUT Short-Circuit Duration - V .....................Continuous OUT Power Dissipation (T 70C) A 8-Pin PDIP ..............................................730 mW 8-Pin SOIC ..............................................470 mW Operating Temperature Range.............-40C to +85C Storage Temperature (Unbiased) .......-65C to +150C TC682 ELECTRICAL SPECIFICATIONS Electrical Characteristics: Over operating temperature range, V = +5V, test circuit Figure 3-1 unless otherwise noted. IN Symbol Parameter Min Typ Max Units Test Conditions V Supply Voltage Range 2.4 5.5 V R = 2 k IN L I Supply Current 185 300 AR = , T = 25C IN L A 400 R = L R V Source Resistance 140 180 I = 10 mA, T = 25C OUT OUT L A 230 I = 10 mA L 170 320 I = 5 mA, V = 2.8V L IN F Oscillator Frequency 12 kHz OSC P Power Efficiency 90 92 % R = 2 k , T = 25C EFF L A V Voltage Conversion Efficiency 99 99.9 % V , R = OUTEFF OUT L DS21453D-page 2 2002-2012 Microchip Technology Inc.