EVALUATION KIT AVAILABLE TC7660H HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER GENERAL DESCRIPTION FEATURES The TC7660H is a pin-compatible, high frequency up- Pin Compatible with 7660, High Frequency grade to the Industry standard TC7660 charge pump volt- Performance DC-to-DC Converter age converter. It converts a +1.5V to +10V input to a Low Cost, Two Low Value External Capacitors corresponding 1.5V to 10V output using only two low- Required ........................................................ (1.0 F) cost capacitors, eliminating inductors and their associated Converts +5V Logic Supply to 5V System cost, size and EMI. Wide Input Voltage Range .................... 1.5V to 10V The TC7660H operates at a frequency of 120kHz Voltage Conversion ........................................ 99.7% (versus 10kHz for the TC7660), allowing the use of 1.0 F Power Efficiency ................................................ 85% external capacitors. Oscillator frequency can be reduced Available in 8-Pin SOIC and 8-Pin PDIP Packages (for lower supply current applications) by connecting an external capacitor from OSC to ground. The TC7660H is available in 8-pin DIP and small PIN CONFIGURATION (DIP and SOIC) outline (SOIC) packages in commercial and extended temperature ranges. + NC 8 1 V + ORDERING INFORMATION CAP OSC 2 7 TC7660HCPA Temperature LOW GND 6 3 TC7660HEPA VOLTAGE (LV) Part No. Package Range V CAP 5 4 OUT TC7660HCOA 8-Pin SOIC 0C to +70C TC7660HCPA 8-Pin Plastic DIP 0C to +70C + V NC 1 8 TC7660HEOA 8-Pin SOIC 40C to +85C + OSC 2 7 TC7660HEPA 8-Pin Plastic DIP 40C to +85C CAP LOW TC7660HCOA 3 TC7660EV Evaluation Kit for GND 6 VOLTAGE (LV) TC7660HEOA Charge Pump Family 4 5 V CAP OUT NC = NO INTERNAL CONNECTION FUNCTIONAL BLOCK DIAGRAM + + V CAP 82 VOLTAGE 7 RC 4 2 OSC LEVEL CAP OSCILLATOR TRANSLATOR 6 LV 5 V OUT INTERNAL VOLTAGE REGULATOR LOGIC NETWORK TC7660H 3 GND 2001 Microchip Technology Inc. DS21466A TC7660H-2 10/1/96HIGH FREQUENCY 7660 DC-TO-DC VOLTAGE CONVERTER TC7660H Operating Temperature Range ABSOLUTE MAXIMUM RATINGS* C Suffix .................................................. 0C to +70C Supply Voltage ...................................................... +10.5V E Suffix ............................................ 40C to +85C LV and OSC Inputs Storage Temperature Range ............... 65C to +150C + Voltage (Note 1) ........................ 0.3V to (V + 0.3V) Lead Temperature (Soldering, 10 sec) ................. +300C + for V < 5.5V *Static-sensitive device. Unused devices must be stored in conductive + + (V 5.5V) to (V + 0.3V) material. Protect devices from static discharge and static fields. Stresses + for V > 5.5V above those listed underAbsolute Maximum Rating may cause perma- + Current Into LV (Note 1) ..................... 20 A for V > 3.5V nent damage to the device. These are stress ratings only and functional Output Short Duration (V 5.5V) ......... Continuous operation of the device at these or any other conditions above those SUPPLY indicated in the operation sections of the specifications is not implied. Power Dissipation (T 70C) (Note 2) A Exposure to absolute maximum rating conditions for extended periods may SOIC ...............................................................470mW affect device reliability. Plastic DIP ......................................................730mW + ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range with V = 5V, C = C = 1 F, C = 0, I 2 OSC Test Circuit (Figure 1), unless otherwise indicated. Symbol Parameter Test Conditions Min Typ Max Unit + I Supply Current R = 0.46 1.0 mA L + V Supply Voltage Range, High Min T Max, 3 10 V A H R = 5k , LV Open L + V Supply Voltage Range, Low Min T Max, 1.5 3.5 V A L R = 5k , LV to GND L R Output Source Resistance I = 20mA, T = 25C 55 80 OUT OUT A I = 20mA, 0C T +70C95 OUT A (C Device) I = 20mA, 40C T +85C 110 OUT A (E Device) + V = 2V, I = 3mA, LV to GND 150 250 OUT 0C T +70C A F Oscillator Frequency 120 kHz OSC P Power Efficiency I = 10mA, Min T Max 81 85 % EFF OUT A V Voltage Efficiency R = 99 99.7 % EFF L NOTES: 1. Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no inputs from sources operating from external supplies be applied prior topower u of the TC7660H. 2. Derate linearly above 50C by 5.5mW/C. TC7660H-2 10/1/96 2001 Microchip Technology Inc. DS21466A 2