USBQNM50403E3/TR7 Microchip

USBQNM50403e3 USBQNM50424e3 HALOGEN 500 W, Non-Magnetic Low Capacitance FREE Available Unidirectional TVS DESCRIPTION This Transient Voltage Suppressor (TVS) is assembled in a non-magnetic QFN-143 package with a leadframe 100% free of iron. It has the same pinout and footprint as the SOT-143 package and is aimed at applications in MRI machines and other magnetic environments where the use of ferrous metals is not acceptable. The configuration gives protection to 1 uni- directional data or interface line. It is designed for use in applications where low capacitance protection is required at the board level from voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-2, electrical fast transients (EFT) per IEC 61000- 4-4 and the secondary effects of lightning. These TVS arrays have a peak power rating of 500 watts for an 8/20 s pulse (figure 1). With a capacitance of only 3 pF, this part can provide protection to very fast data lines including USB at 900 Mbits/sec. QFN-143 Important: For the latest information, visit our website USBQNM50403e3 USBQNM50424e3 MECHANICAL and PACKAGING CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0. TERMINALS: RoHS compliant annealed matte-tin plating over EFTEC64T non-magnetic copper alloy. Readily solderable per MIL-STD-750, method 2026. MARKING: Body marked with part number code (Nxx). POLARITY: Dot in corner indicates pin 1. TAPE-AND-REEL: Standard per EIA-481-B (add TR suffix to part number). Consult factory for quantities. WEIGHT: Approximately 16.53 milligrams See Package Dimensions on last page. PART NOMENCLATURE USB Q NM 5 04 03 e3 USB Suitable RoHS Compliant QFN-143 Package Rated Standoff Voltage (V ) WM (see Electrical Characteristics Non-Magnetic table) 500 W P Rating 4 Pin Package PP SYMBOLS & DEFINITIONS Symbol Definition Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in V(BR) temperature that caused it expressed in %/C or mV/C. I Breakdown Current: The current used for measuring breakdown voltage V . (BR) (BR) I Standby Current: The current through the device at rated stand-off voltage. D Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse I current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an PP external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. V Breakdown Voltage: The voltage across the device at a specified current I in the breakdown region. (BR) (BR) Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an V C impulse current (I ) for a specified waveform. PP Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that V WM may be continuously applied over the standard operating temperature. ELECTRICAL CHARACTERISTICS 25 C unless otherwise stated STAND- BREAKDOWN CLAMPING CLAMPING STANDBY CAPACITANCE TEMPERATURE OFF VOLTAGE VOLTAGE VOLTAGE CURRENT (f= 1 MHz) COEFFICIENT VOLTAGE V V V I C OF V (BR) C C D (BR) PART DEVICE V 1 mA 1 Amp 5 Amp V 0 V WM WM V(BR) NUMBER MARKING (Figure 2) (Figure 2) Volts Volts Volts Volts A pF mV/C MAX MIN MAX MAX MAX MAX MAX USBQNM50403e3 N03 3.3 4.0 8.0 11 200 3 -5 USBQNM50405e3 N05 5.0 6.0 10.8 12 40 3 1 USBQNM50412e3 N12 12.0 13.3 19.0 26 1 3 8 USBQNM50415e3 N15 15.0 16.7 24.0 32 1 3 11 USBQNM50424e3 N24 24.0 26.7 43.0 57 1 3 28 RF01087-1, Rev A (9/18/13) 2013 Microsemi Corporation Page 2 of 5