256Kx32 SSRAM/4Mx32 SDRAM External Memory Solution for Texas Instruments TMS320C6000 DSP WED9LC6816V FEATURES DESCRIPTION Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipe line SRAM and a 4Mx32 SSRAM: 200, 166,150, and 133 MHz Synchronous DRAM array con struct ed with SDRAMs: 125 and 100 MHz one 256K x 32 SBSRAM and two 4Mx16 DSP Memory Solution SDRAM die mounted on a multilayer Texas Instruments TMS320C6201 laminate sub strate. The device is packaged in a 153 lead, 14mm x 22mm, BGA. Texas Instruments TMS320C6701 Packaging: The WED9LC6816V provides a total memory solution for the Texas Instruments TMS320C6201 and the TMS320C6701 DSPs 153 pin BGA, JEDEC MO-163 The Synchronous Pipeline SRAM is available with clock speeds 3.3V Operating supply voltage of 200, 166,150 and 133 MHz, allowing the user to de vel op a fast Direct control interface to both the SSRAM and SDRAM external memory for the SSRAM interface port . ports on the C6x The SDRAM is available in clock speeds of 125 and 100 MHz, Common address and databus allowing the user to develop a fast external memory for the SDRAM 65% space savings vs. monolithic solution interface port. Reduced system inductance and capacitance The WED9LC6816V is available in both commercial and in dus tri al temperature ranges. This product is subject to change without notice. Figure 1 PIN CONFIGURATION TOP VIEW PIN DESCRIPTION A0-17 Address Bus 123456789 DQ0-31 Data Bus A DQ19 DQ23 VCC VSS VSS VSS VCC DQ24 DQ28 SSCK SSRAM Clock B DQ18 DQ22 VCC VSS SDCE VSS VCC DQ25 DQ29 SSADC SSRAM Address Status Control C VCCQ VCCQ VCC SDWE SDA10 NC VCC VCCQ VCCQ SSWE SSRAM Write Enable D DQ17 DQ21 VCC VSS VSS VSS VCC DQ26 DQ30 SSOE SSRAM Output Enable E DQ16 DQ20 VCC VSS SDCK VSS VCC DQ27 DQ31 SDCK SDRAM Clock F VCCQ VCCQ VCC VSS VSS VSS VCC VCCQ VCCQ SDRAS SDRAM Row Address Strobe G NC NC NC SDRAS SDCAS VSS A2 A4 A5 SDCAS SDRAM Column Address Strobe H NC NC A8 VSS VSS NC A1 A3 A10 SDWE SDRAM Write Enable J A6 A7 A9 VSS VSS NC A0 A11 A12 SDA10 SDRAM Address 10/auto precharge K A17 NC/A18 NC/A19 VSS VSS NC NC A13 A14 BWE0-3 SSRAM Byte Write Enables SDRAM SDQM 0-3 L NC NC NC BWE2 BWE3 NC NC A15 A16 SSCE Chip Enable SSRAM Device M VCCQ VCCQ VCC BWE0 BWE1 NC VCC VCCQ VCCQ SDCE Chip Enable SDRAM Device N DQ12 DQ11 VCC VSS VSS VSS VCC DQ4 DQ0 VCC Power Supply pins P DQ13 DQ10 VCC VSS SSCK VSS VCC DQ5 DQ1 VCCQ Data Bus Power Supply pins, R VCCQ VCCQ VCC VSS VSS VSS VCC VCCQ VCCQ VSS Ground T DQ14 DQ9 VCC SSADC SSWE NC VCC DQ6 DQ2 NC No Contact U DQ15 DQ8 VCC SSOE SSCE NC VCC DQ7 DQ3 1 Mercury Corp. - Memory and Storage Solutions (602) 437-1520 www.mrcy.com 4377.04E-0816-ss-WED9LC6816VWED9LC6816V Figure 2 BLOCK DIAGRAM A0-17 A0 A0 A1 A1 A2 A3 A4 DQ1-8 DQ0-7 A5 A6 DQ9-16 DQ8-15 A7 A8 DQ17-24 DQ16-23 A9 DQ25-32 DQ24-31 A10 A11 A12 A13 A14 A15 A16 A17 SSWE BWE BWE0 BW1 BWE1 BW2 BWE2 BW3 BWE3 BW4 SSCE CE2 SSOE OE SSADC ADSC SSCK CK DQ0-31 A0 A1 A2 A3 A4 A5 A6 A7 A8 DQ0-7 DQ0-7 A9 DQ8-15 DQ8-15 A11 SDA10 A10/AP A12 BA0 A13 BA1 LDQM UDQM SDCE CS SDRAS RAS SDCAS CAS SDWE WE SDCK CK A0 A1 A2 A3 A4 A5 A6 A7 DQ0-7 DQ16-23 A8 A9 DQ8-15 DQ24-31 A11 A10/AP A12 BA0 A13 BA1 LDQM UDQM CS RAS CAS WE CK 2 4377.04E-0816-ss-WED9LC6816V Mercury Corp. - Memory and Storage Solutions (602) 437-1520 www.mrcy.com