MSJP20N65 Features Optimized Body Diode Reverse Recovery Performance Low On-resistance and Low Conduction Losses N-CHANNEL Ultra Low Gate Charge Cause Lower Driving Requirement Epoxy Meets UL 94 V-0 Flammability Rating Super-Junction Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Power MOSFET Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range : -55C to +150C TO-220AB(H) Storage Temperature Range: -55C to +150C Thermal Resistance: 0.83C/W Junction to Case A E B Parameter Rating Symbol Unit G C Drain-Source Voltage V 650 V DS P D Gate-Source Volltage V 30 V GS S F T =25C 20 A C 1 2 3 I Continuous Drain Current R D T =100C 12 A H C J (Note 2) I 60 A Pulsed Drain Current DM K L O (Note 3) E 484 mJ Single Pulse Avalanche Energy AS Repetitive Avalanche Energy E 0.7 mJ AR N Q Avalanche Current I 3.5 M A AR P Total Power Dissipation 151 W D DIMENSIONS Note: INCHES MM DIM NOTE 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, MIN MAX MIN MAX <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. A 0.172 0.188 4.37 4.77 2. Repetitive Rating Pulse Width Limited by Maximum Junction Temperature. B 0.049 0.057 1.25 1.45 3. I =3.5A, V =50V, R =25, Starting T =25C. C 0.246 0.270 6.25 6.85 AS DD G J D 0.594 0.634 15.10 16.10 E 0.382 0.406 9.70 10.30 Internal Structure F 0.346 0.370 8.80 9.40 G 0.102 0.118 2.60 3.00 D H 0.087 0.102 2.20 2.60 J ----- 0.134 ----- 3.40 K 0.046 0.058 1.17 1.47 L 0.028 0.037 0.70 0.95 1. Gate G M 0.200 5.08 TYP. 2. Drain 0.100 2.54 N TYP. 3. Source S O 0.502 0.543 12.75 13.80 P 0.134 0.150 3.40 3.80 Q 0.016 0.026 0.40 0.65 R 0.276 ----- 7.00 ----- S 0.217 ----- 5.50 ----- Rev.3-3-12012020 1/4 MCCSEMI.COMMSJP20N65 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 650 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =30V 100 nA GSS DS GS V =650V, V =0V, T =25C 1 DS GS C Zero Gate Voltage Drain Current I A DSS V =650V, V =0V, T =125C 100 DS GS C (Note 4) V V =V , I =250A 2.5 4.5 V Gate-Threshold Voltage GS(th) DS GS D (Note 4) R V =10V, I =10A 150 170 m Drain-Source On-Resistance DS(on) GS D (Note 4) R f = 1.0MHz Open Drain 12 Gate Resistance G (Note 5) Dynamic Characteristics C Input Capacitance 1724 iss V =100V,V =0V,f=1MHz Output Capacitance C 61 pF DS GS oss C Reverse Transfer Capacitance 6 rss Total Gate Charge Q 39 g Q V =520V,V =10V,I =20A Gate-Source Charge 8 nC gs DS GS D Q Gate-Drain Charge 15 gd t Turn-On Delay Time 15 d(on) t Turn-On Rise Time 59 r V =400V,I =20A DD D ns V =10V,R =25 GS GEN t Turn-Off Delay Time 121 d(off) t Turn-Off Fall Time 44 f Drain-Source Diode Characteristics V V =0V, I =20A V Diode Forward Voltage 1.2 SD GS S Continuous Body Diode Current I 20 A S t Reverse Recovery Time 423 ns rr V =400V, I =I , R F S Reverse Recovery Charge Q 5.3 C rr di /dt = 100A/s F I Peak Reverse Recovery Current 25 A rrm Note: 4. Pulse Test: Pulse Width 300s, Duty Cycle 1% . 5. Guaranteed by Design, not Subject to Production. Rev.3-3-12012020 2/4 MCCSEMI.COM