X-On Electronics has gained recognition as a prominent supplier of JS28F064M29EWLA NOR Flash across the USA, India, Europe, Australia, and various other global locations. JS28F064M29EWLA NOR Flash are a product manufactured by Micron. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

JS28F064M29EWLA Micron

JS28F064M29EWLA electronic component of Micron
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Part No.JS28F064M29EWLA
Manufacturer: Micron
Category: NOR Flash
Description: NOR Flash PARALLEL NOR SLC 4MX16 TSOP
Datasheet: JS28F064M29EWLA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.2382 ea
Line Total: USD 3.24 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 3.2382
10 : USD 2.8602
100 : USD 2.5578
250 : USD 2.2365
500 : USD 2.0664

   
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We are delighted to provide the JS28F064M29EWLA from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JS28F064M29EWLA and other electronic components in the NOR Flash category and beyond.

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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory JR28F032M29EWXX PZ28F032M29EWXX JS28F064M29EWXX PC28F064M29EWXX JR28F064M29EWXX PZ28F064M29EWXX JS28F128M29EWXX PC28F128M29EWXX RC28F128M29EWXX V /WP pin protection PP Features V voltage on V to accelerate programming PPH PP Supply voltage performance V = 2.73.6V (program, erase, read) CC Protects highest/lowest block (H/L uniform) or V = 1.653.6V (I/O buffers) CCQ top/bottom two blocks (T/B boot) Asynchronous random or page read Software protection Page size: 8 words or 16 bytes Volatile protection Page access: 25ns Nonvolatile protection Random access: 60ns (BGA) 70ns (TSOP) Password protection Buffer program: 256-word MAX program buffer Password access Program time Extended memory block 0.56s per byte (1.8 MB/s TYP when using 256- 128-word (256-byte) block for permanent secure word buffer size in buffer program without V ) PPH identification 0.31s per byte (3.2 MB/s TYP when using 256- Program or lock implemented at the factory or by word buffer size in buffer program with V ) PPH the customer Memory organization Low-power consumption: Standby mode 32Mb: 64 main blocks, 64KB each, or eight 8KB JESD47H-compliant boot blocks (top or bottom) and 63 main blocks, 100,000 minimum ERASE cycles per block 64KB each Data retention: 20 years (TYP) 64Mb: 128 main blocks, 64KB each, or eight 8KB 65nm single-bit cell process technology boot blocks (top or bottom) and 127 main blocks, Packages (JEDEC-standard) 64 KB each 56-pin TSOP (128Mb, 64Mb) 128Mb: 128 main blocks, 128KB each 48-pin TSOP (64Mb, 32Mb) Program/erase controller 64-ball FBGA (128Mb, 64Mb) Embedded byte/word program algorithms 48-ball BGA (64Mb, 32Mb) Program/erase suspend and resume capability Green packages available READ operation on any block during a PRO- RoHS-compliant GRAM SUSPEND operation Halogen-free READ or PROGRAM operation on one block dur- Operating temperature ing an ERASE SUSPEND operation on another Ambient: 40C to +85C block BLANK CHECK operation to verify an erased block Unlock bypass, block erase, chip erase, and write to buffer capability Fast buffered/batch programming Fast block and chip erase PDF: 09005aef84dc44a7 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m29ew 32Mb-128Mb.pdf - Rev. B 11/12 EN 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features Part Numbering Information This product is available with the prelocked extended memory block. Devices are shipped from the factory with memory content bits erased to 1. For a list of available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Table 1: Part Number Information Part Number Category Category Details Package JS = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant PC = 64-ball Fortified BGA, 11mm x 13mm, lead-free, halogen-free, RoHS-compliant RC = 64-ball Fortified BGA, 11mm x 13mm, leaded JR = 48-pin TSOP, 12mm x 20mm, lead-free, halogen-free, RoHS-compliant PZ = 48-ball BGA, 6mm x 8mm, lead-free, halogen-free, RoHS-compliant Product designator 28F = Parallel NOR interface Density 128 = 128Mb 064 = 64Mb 032 = 32Mb Device type M29EW = Embedded Flash memory (3V core, page read) Device function H = Highest block protected by V /WP uniform block PP L = Lowest block protected by V /WP uniform block PP B = Bottom boot bottom two blocks protected by V /WP PP T = Top boot top two blocks protected by V /WP PP Features A/B/F/X or an asterisk (*) = Combination of features, including packing media, security features, and specific customer request information Valid M29EW Part Number Combinations Table 2: Standard Part Numbers by Density, Medium, and Package Package JS PC RC JR PZ 32Mb Tray JR28F032M29EWHA PZ28F032M29EWHA JR28F032M29EWLA PZ28F032M29EWLA JR28F032M29EWBA PZ28F032M29EWBA JR28F032M29EWTA PZ28F032M29EWTA Tape JR28F032M29EWBB PZ28F032M29EWBB and JR28F032M29EWTB reel PDF: 09005aef84dc44a7 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m29ew 32Mb-128Mb.pdf - Rev. B 11/12 EN 2012 Micron Technology, Inc. All rights reserved. Density Medium

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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