256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL V /WP pin protection PP Features Protects first or last block regardless of block Supply voltage -protection settings V = 2.73.6V (program, erase, read) CC Software protection V = 1.653.6V (I/O buffers) CCQ Volatile protection V = 12V for fast program (optional) PPH Nonvolatile protection Asynchronous random/page read Password protection Page size: 8 words or 16 bytes Extended memory block Page access: 25ns, 30ns 128-word (256-byte) memory block for perma- 1 Random access: 60ns , 70ns, 80ns nent, secure identification Fast program commands: 32-word (64-byte) write Programmed or locked at the factory or by the buffer customer Enhanced buffered program commands: 256-word Common Flash interface Program time 64-bit security code 16s per byte/word (TYP) Low power consumption: Standby and automatic Chip program time: 10s with V and 16s with- PPH mode out V PPH JESD47H-compliant Memory organization 100,000 minimum PROGRAM/ERASE cycles per Uniform blocks: 256 main blocks, 128KB, or 64- block Kwords each Data retention: 20 years (TYP) Program/erase controller 65nm single-level cell (SLC) process technology Embedded byte/word program algorithms Fortified BGA, TBGA, and TSOP packages Program/erase suspend and resume capability Gree packages available Read from any block during a PROGRAM SUS- RoHS-compliant PEND operation Halogen-free Read or program another block during an ERASE Automotive device grade (6) temperature: SUSPEND operation 40C to +85C (automotive grade-certified) Unlock bypass, block erase, chip erase, write to buf- Automotive device grade (3) temperature: fer and program 40C to +125C (automotive grade-certified) Fast buffered/batch programming Fast block/chip erase 1. The 60ns device is available upon customer Note: request. PDF: 09005aef84bd3b68 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m29w 256mb.pdf - Rev. F 2/18 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.256Mb: 3V Embedded Parallel NOR Flash Features Part Numbering Information Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specifica- tion comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Table 1: Part Number Information Part Number Category Category Details Notes Device type M29W Operating voltage W = V = 2.7 to 3.6V CC Device function 256GH = 256Mb (x8/x16) page, uniform block Flash memory, highest block protected by V /WP PP 256GL = 256Mb (x8/x16) page, uniform block Flash memory, lowest block protected by V /WP PP Speed 70 = 70ns 1 60 = 60ns 1, 2 7A = 70ns 1, 3 Package N = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant ZA = 64-ball TBGA, 10mm x 13mm, lead-free, halogen-free, RoHS-compliant ZS = 64-ball fortified BGA, 11mm x 13mm Temperature range 1 = 0 to 70C 6 = 40C to +85C 3 = 40C to +125C Shipping options E = RoHS-compliant package, standard packing F = RoHS-compliant package, tape and reel packing Notes: 1. 80ns if V = 1.65V to V . CCQ CC 2. The 60ns device is available upon customer request. 3. Automotive-qualified, available only with option 6. Qualified and characterized according to AEC Q100 and Q003 or equivalent advanced screening according to AEC Q001 and Q002 or equivalent. PDF: 09005aef84bd3b68 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m29w 256mb.pdf - Rev. F 2/18 EN 2013 Micron Technology, Inc. All rights reserved.