M29W800DB70ZE6F Micron

M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features Supply voltage V = 2.7 V to 3.6 V for program, erase CC and read Access times: 45, 70, 90 ns Programming time 10 s per byte/word typical SO44 (M) 19 memory blocks 1 boot block (top or bottom location) 2 parameter and 16 main blocks Program/erase controller Embedded byte/word program algorithms Erase suspend and resume modes TSOP48 (N) Read and program another block during 12 x 20 mm erase suspend Unlock bypass program command FBGA Faster production/batch programming Temporary block unprotection mode TFBGA48 (ZE) Common flash interface 6 x 8 mm 64-bit security code Low power consumption Standby and automatic standby 100,000 program/erase cycles per block Electronic signature Manufacturer code: 0020h Top device code M29W800DT: 22D7h Bottom device code M29W800DB: 225Bh April 2009 Rev 11 1/52 www.numonyx.com 1Contents M29W800DT, M29W800DB Contents 1 Description . 6 2 Signal descriptions . 12 2.1 Address inputs (A0-A18) . 12 2.2 Data inputs/outputs (DQ0-DQ7) 12 2.3 Data inputs/outputs (DQ8-DQ14) . 12 2.4 Data input/output or address input (DQ15A-1) . 12 2.5 Chip enable (E) 12 2.6 Output enable (G) . 12 2.7 Write enable (W) . 13 2.8 Reset/block temporary unprotect (RP) . 13 2.9 Ready/busy output (RB) 13 2.10 Byte/word organization select (BYTE) . 13 2.11 V supply voltage 13 CC 2.12 V ground 14 SS 3 Bus operations 15 3.1 Bus read 15 3.2 Bus write 15 3.3 Output disable . 15 3.4 Standby 15 3.5 Automatic standby 15 3.6 Special bus operations . 16 3.6.1 Electronic signature 16 3.6.2 Block protection and blocks unprotection . 16 4 Command interface . 17 4.1 Read/Reset command . 17 4.2 Auto Select command . 17 4.3 Program command 17 4.4 Unlock Bypass command . 18 4.5 Unlock Bypass Program command . 18 2/52