128Mb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase MT25QL128AB Options Marking Features Voltage SPI-compatible serial bus interface 2.73.6V L Single and double transfer rate (STR/DTR) Density Clock frequency 128Mb 128 133 MHz (MAX) for all protocols in STR Device stacking 80 MHz (MAX) for all protocols in DTR Monolithic A Dual/quad I/O commands for increased through- Device generation B put up to 80 MB/s Die revision A Supported protocols in both STR and DTR Pin configuration Extended I/O protocol RESET and HOLD 8 Dual I/O protocol Sector Size Quad I/O protocol 64KB E Execute-in-place (XIP) Packages JEDEC-standard, RoHS- PROGRAM/ERASE SUSPEND operations compliant Volatile and nonvolatile configuration settings 16-pin SOP2, 300 mils body width SF Software reset (SO16W) Additional reset pin for selected part numbers 8-pin SOP2, 208 mils body width SE Dedicated 64-byte OTP area outside main memory (SO8W) Readable and user-lockable 24-ball T-PBGA, 05/6mm x 8mm 12 Permanent lock with PROGRAM OTP command (TBGA24) Erase capability 24-ball T-PBGA 05/6mm x 8mm (4 x 14 Bulk erase 6 array) Sector erase 64KB uniform granularity W-PDFN-8 8mm x 6mm (MLP8 8mm W9 Subsector erase 4KB, 32KB granularity x 6mm) Security and write protection W-PDFN-8 6mm x 5mm (MLP8 6mm W7 Volatile and nonvolatile locking and software x 5mm) write protection for each 64KB sector Standard security 0 Nonvolatile configuration locking Special options Password protection Standard S Hardware write protection: nonvolatile bits Automotive A (BP 3:0 and TB) define protected area size Operating temperature range Program/erase protection during power-up From 40C to +85C IT CRC detects accidental changes to raw data From 40C to +105C AT Electronic signature JEDEC-standard 3-byte signature (BA18h) Extended device ID: two additional bytes identify device factory options JESD47H-compliant Minimum 100,000 ERASE cycles per sector Data retention: 20 years (TYP) PDF: 09005aef85823aee Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 qlks 128mb 3V 45nm.pdf - Rev. E 10/15 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.128Mb, 3V Multiple I/O Serial Flash Memory Features Part Number Ordering Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Ordering Information MT 25Q L xxx A BA 1 E SF - 0 S IT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 25Q = SPI NOR QS = Qualification samples Voltage Operating Temperature L = 2.73.6V IT = 40C to +85C U = 1.72.0V AT = 40C to +105C (Grade 2 AEC-Q100) Density Special Options 064 = 64Mb (8MB) S = Standard 128 = 128Mb (16MB) A = Automotive quality 256 = 256Mb (32MB) 512 = 512Mb (64MB) Security Features 01G = 1Gb (128MB) 0 = Standard default security 02G = 2Gb (256MB) Package Codes Stack 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array) A = 1 die/1 S 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array) B = 2 die/1 S SC = 8-pin SOP2, 150 mil C = 4 die/1 S SE = 8-pin SOP2, 208 mil SF = 16-pin SOP2, 300 mil Device Generation W7 = 8-pin W-PDFN, 6 x 5mm B = 2nd generation W9 = 8-pin W-PDFN, 8 x 6mm 1 5x = WLCSP package Die Revision A = Rev. A Sector size B = Rev. B E = 64KB Pin Configuration Option 1 = HOLD pin 3 = RESET pin 8 = RESET & HOLD pin Note: 1. WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability. PDF: 09005aef85823aee Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 qlks 128mb 3V 45nm.pdf - Rev. E 10/15 EN 2014 Micron Technology, Inc. All rights reserved.