X-On Electronics has gained recognition as a prominent supplier of MT25QL128ABB8E12-0AUT NOR Flash across the USA, India, Europe, Australia, and various other global locations. MT25QL128ABB8E12-0AUT NOR Flash are a product manufactured by Micron. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

MT25QL128ABB8E12-0AUT Micron

MT25QL128ABB8E12-0AUT electronic component of Micron
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See Product Specifications
Part No.MT25QL128ABB8E12-0AUT
Manufacturer: Micron
Category: NOR Flash
Description: Serial NOR Flash Memory 128Mbit 16M X 8Bit 3.3V 24-Pin T-PBGA Tray
Datasheet: MT25QL128ABB8E12-0AUT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1122: USD 5.3138 ea
Line Total: USD 5962.08 
Availability - 0
MOQ: 1122  Multiples: 1122
Pack Size: 1122
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1122
Multiples : 1122
1122 : USD 5.3138
2244 : USD 5.239
4488 : USD 5.0893
6732 : USD 4.977
8976 : USD 4.7899
11220 : USD 4.7151
112200 : USD 4.6403

   
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We are delighted to provide the MT25QL128ABB8E12-0AUT from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT25QL128ABB8E12-0AUT and other electronic components in the NOR Flash category and beyond.

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128Mb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase MT25QL128ABB Options Marking Features Voltage SPI-compatible serial bus interface 2.73.6V L Single and double transfer rate (STR/DTR) Density Clock frequency 128Mb 128 133 MHz (MAX) for all protocols in STR Device stacking 90 MHz (MAX) for all protocols in DTR Monolithic A Dual/quad I/O commands for increased through- Device generation B put up to 90 MB/s Die revision B Supported protocols: Extended, Dual, and Quad I/O Pin configuration in both STR and DTR RESET# and HOLD# 8 Execute-in-place (XIP) Sector size PROGRAM/ERASE SUSPEND operations 64KB E Volatile and nonvolatile configuration settings Packages JEDEC-standard, RoHS- Software reset compliant Additional reset pin for selected part numbers 16-pin SOP2, 300 mils body width SF Dedicated 64-byte OTP area outside main memory (SO16W) Readable and user-lockable 8-pin SOP2, 208 mils body width SE Permanent lock with PROGRAM OTP command (SO8W) Erase capability 24-ball T-PBGA, 05/6mm 8mm 12 Bulk erase (TBGA24) Sector erase 64KB uniform granularity 24-ball T-PBGA 05/6mm 8mm (4 14 Subsector erase 4KB, 32KB granularity 6 array) Erase performance W-PDFN-8 8mm 6mm (MLP8 8mm W9 400KB/sec (64KB sector) 6mm) 80KB/sec (4KB sub-sector) W-PDFN-8 6mm 5mm (MLP8 6mm W7 Program performance: 2MB/sec 5mm) Security and write protection Standard security 0 Volatile and nonvolatile locking and software Special options write protection for each 64KB sector Standard S Nonvolatile configuration locking Automotive A Password protection Operating temperature range Hardware write protection: nonvolatile bits From 40C to +85C IT (BP[3:0] and TB) define protected area size From 40C to +105C AT Program/erase protection during power-up From 40C to +125C UT CRC detects accidental changes to raw data Electronic signature JEDEC-standard 3-byte signature (BA18h) Extended device ID: Two additional bytes identify device factory options JESD47H-compliant Minimum 100,000 ERASE cycles per sector Data retention: 20 years (TYP) CCM005-1718347970-10423 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt25q_qlht_L_128_ABB_xxT.pdf - Rev. D 09/18 EN 2017 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.128Mb, 3V Multiple I/O Serial Flash Memory Features Part Number Ordering Micron serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Ordering Information MT 25Q L xxx A BA 1 E SF - 0 S IT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 25Q = SPI NOR QS = Qualification samples Voltage Operating Temperature L = 2.73.6V IT = 40C to +85C U = 1.72.0V AT = 40C to +105C UT = 40C to +125C Density 064 = 64Mb (8MB) Special Options 128 = 128Mb (16MB) S = Standard 256 = 256Mb (32MB) A = Automotive grade AEC-Q100 512 = 512Mb (64MB) 01G = 1Gb (128MB) Security Features 02G = 2Gb (256MB) 0 = Standard default security Stack Package Codes A = 1 die/1 S# 12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array) B = 2 die/1 S# 14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array) C = 4 die/1 S# SC = 8-pin SOP2, 150 mils SE = 8-pin SOP2, 208 mils Device Generation SF = 16-pin SOP2, 300 mils B = 2nd generation W7 = 8-pin W-PDFN, 6 x 5mm W9 = 8-pin W-PDFN, 8 x 6mm 1 Die Revision 5x = WLCSP package A = Rev. A B = Rev. B Sector size E = 64KB sectors, 4KB and 32KB subsectors Pin Configuration Option 1 = HOLD# pin 3 = RESET# pin 8 = RESET# and HOLD# pin Note: 1. WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability. CCM005-1718347970-10423 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt25q_qlht_L_128_ABB_xxT.pdf - Rev. D 09/18 EN 2017 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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