1Gb: x16, 3V, MT28EW Automotive Parallel NOR Flash Features Parallel NOR Flash Automotive Memory MT28EW01GABA1xJS-0AAT, MT28EW01GABA1xPC-0AAT BLANK CHECK operation to verify an erased block Features CYCLIC REDUNDANCY CHECK (CRC) operation to Single-level cell (SLC) process technology verify a program pattern Density: 1Gb V /WP protection PP Supply voltage Protects first or last block regardless of block V = 2.73.6V (program, erase, read) CC protection settings V = 1.65 - V (I/O buffers) CCQ CC Software protection Asynchronous random/page read Volatile protection Page size: 16 words or 32 bytes Nonvolatile protection Page access: 20ns (V = V = 2.7-3.6V) CC CCQ Password protection Random access: 105ns (V = V = 2.7-3.6V) CC CCQ Extended memory block Random access: 110ns (V = 1.65-V ) CCQ CC 128-word (256-byte) block for permanent, secure Buffer program (512-word program buffer) identification 2.0 MB/s (TYP) when using full buffer program Programmed or locked at the factory or by the 2.5 MB/s (TYP) when using accelerated buffer customer program (V ) HH JESD47-compliant Word/Byte program: 25us per word (TYP) 100,000 (minimum) ERASE cycles per block Block erase (128KB): 0.2s (TYP) Data retention: 20 years (TYP) Memory organization Package Uniform blocks: 128KB or 64KW each 56-pin TSOP, 14 x 20mm (JS) x8/x16 data bus 64-ball LBGA, 11 x 13mm (PC) Program/erase suspend and resume capability RoHS-compliant, halogen-free packaging Read from another block during a PROGRAM Automotive operating temperature SUSPEND operation Ambient: 40C to +105C Read or program another block during an ERASE SUSPEND operation Unlock bypass, block erase, chip erase, and write to buffer capability 09005aef85e6c8e4 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 mt28ew 2nd gen 1gb automotive.pdf - Rev. G 05/18 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1Gb: x16, 3V, MT28EW Automotive Parallel NOR Flash Features Part Numbering Information For available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Number Chart H MT 28E W 512 A BA 1 JS - 0 A AT ES Micron Technology Production Status Blank = Production Part Family ES = Engineering sample 28E = Embedded Parallel NOR Operating Temperature AT = 40C to +105C Voltage (Grade 2 AEC-Q100) W = 2.73.6V V core CC Density Special Options A = Automotive quality 128 = 128Mb 256 = 256Mb 512 = 512Mb Security Features 01G = 1Gb 0 = Standard default security 02G = 2Gb 1 = OTP configurable Package Codes Stack JS = 56-pin TSOP, 14mm x 20mm A = Single die B = Two die PC = 64-ball LBGA, 11mm x 13mm (All packages are lead-free, halogen-free, RoHS-compliant) Device generation B = Second generation Block Structure Die Revision H = High lock A = Rev A L = Low lock Configuration 1 = x8, x16 09005aef85e6c8e4 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 mt28ew 2nd gen 1gb automotive.pdf - Rev. G 05/18 EN 2014 Micron Technology, Inc. All rights reserved.