256Mb, 512Mb, 1Gb StrataFlash Memory Features Micron StrataFlash Embedded Memory MT28GU256AAA1EGC-0SIT, MT28GU256AAA2EGC-0SIT MT28GU512AAA1EGC-0SIT, MT28GU512AAA2EGC-0SIT, MT28GU01GAAA1EGC-0SIT, MT28GU01GAAA2EGC-0SIT Power Features Core voltage: 1.7 2.0V High-performance read, program, and erase I/O voltage: 1.72.0V 96ns initial read access Standby current: 60A (TYP) for 512Mb, 65nm 108 MHz with zero wait-state synchronous burst Automatic power savings mode reads: 7ns clock-to-data output 16-word synchronous-burst read current: 23mA 133 MHz with zero wait-state synchronous burst (TYP) 108 MHz 24mA (TYP) 133 MHz reads: 5.5ns clock-to-data output Software 8-, 16-, and continuous-word synchronous-burst Micron Flash data integrator (FDI) optimized reads Basic command set (BCS) and extended com- Programmable WAIT configuration mand set (ECS) compatible Customer-configurable output driver impedance Common Flash interface (CFI) capable Buffered Programming: 2.0 s/Word (TYP), Security 512Mb, 65nm One-time programmable (OTP) space Block erase: 0.9s per block (TYP) 64 unique factory device identifier bits 20s (TYP) program/erase suspend 2112 user-programmable OTP bits Architecture Absolute write protection: V = GND PP 16-bit wide data bus Power-transition erase/program lockout Multilevel cell technology Individual zero latency block locking Symmetrically-blocked array architecture Individual block lock-down 256KB erase blocks Density and packaging 1Gb device: Eight 128Mb partitions 256Mb, 512Mb, and 1Gb 512Mb device: Eight 64Mb partitions Address-data multiplexed and non-multiplexed 256Mb device: Eight 32Mb partitions interfaces READ-While-PROGRAM and READ-While- 64-Ball Easy BGA ERASE commands Status register for partition/device status Blank check feature Temperature Range Expanded temperature: 40C to +85C JESD47H-compliant Minimum 100,000 ERASE cycles per block Data retention: 20 years (TYP) PDF: 09005aef8448483a Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 256-512mb 1gb 65nm g18 it.pdf - Rev. I 05/15 EN 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.256Mb, 512Mb, 1Gb StrataFlash Memory Features Part Numbering Information Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specifica- tion comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Figure 1: Current Part Number Decoder MT 28G U 512 A A A 2 E GC -0 S IT -- Micron Technology Production Status Blank = Production Part Family ES = Engineering samples 28G = G series parallel NOR Voltage Operating Temperature U = 1.72.0V IT = 40C to +85C (Grade 3 AEC-Q100) AT = 40C to +105C (Grade 2 AEC-Q100) Device Density 256 = 256Mb 512 = 512Mb Special Options 01G = 1Gb A = Automotive quality S = Standard X = PLP Stack A = Single die Security Features 0 = Standard features Lithography 65nm = A Package Codes GC = 64-ball TBGA, 10 x 8 x 1.2mm Die Revision Rev. A = A Rev. B = B Rev. C = C Block Structure E = Uniform Interface 1 = x16 2 = x16 A/D MUX PDF: 09005aef8448483a Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 256-512mb 1gb 65nm g18 it.pdf - Rev. I 05/15 EN 2011 Micron Technology, Inc. All rights reserved.