MT29F1G08ABAEAH4-AITX:E TR Micron

Micron Confidential and Proprietary 1Gb x8, x16: Automotive NAND Flash Memory Features Automotive NAND Flash Memory MT29F1G08ABAEAWP-AITX:E, MT29F1G08ABAEAH4-AITX:E, MT29F1G08ABBEAH4-AITX:E, MT29F1G16ABBEAH4-AITX:E, MT29F1G16ABBEAHC-AIT:E Ready/busy (R/B ) signal provides a hardware Features method for detecting operation completion 1 Open NAND Flash Interface (ONFI) 1.0-compliant WP signal: write protect entire device Single-level cell (SLC) technology First block (block address 00h) is valid when ship- Organization ped from factory with ECC. For minimum required Page size x8: 2112 bytes (2048 + 64 bytes) ECC, see Error Management. Page size x16: 1056 words (1024 + 32 words) Block 0 requires 1-bit ECC if PROGRAM/ERASE cy- Block size: 64 pages (128K + 4K bytes) cles are less than 1000 Plane size: 2 planes x 512 blocks per plane RESET (FFh) required as first command after pow- Device size: 1Gb: 1024 blocks er-on Asynchronous I/O performance Alternate method of device initialization (Nand In- t t 3 RC/ WC: 20ns (3.3V), 25ns (1.8V) it) after power up (contact factory) Array performance Quality and reliability Read page: 25s Data retention: 10 years Program page: 200s (TYP, 3.3V and 1.8V) Endurance: 100,000 PROGRAM/ERASE cycles Erase block: 700s (TYP) Operating Voltage Range Command set: ONFI NAND Flash Protocol V : 2.73.6V CC Advanced command set V : 1.71.95V CC Program page cache mode Operating temperature: Read page cache mode Automotive Industrial (AIT): 40C to +85C One-time programmable (OTP) mode Package 2 Two-plane commands 48-pin TSOP Type 1, CPL Read unique ID 63-ball VFBGA Internal data move 1. The ONFI 1.0 specification is available at Notes: Block lock (1.8V only) www.onfi.org. Operation status byte provides software method for 2. CPL = Center parting line. detecting 3. Available only in the 1.8V VFBGA package. Operation completion Pass/fail condition Write-protect status Internal data move operations supported within the device from which data is read PDF: 09005aef859aa17c Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m68m non ecc automotive.pdf Rev. C 01/15 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 1Gb x8, x16: Automotive NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 1G 08 A B B E A HC AIT ES :E Micron Technology Design Revision (shrink) Product Family Production Status 29F = NAND Flash memory Blank = Production ES = Engineering sample Density 1G = 1Gb Special Options Blank Device Width X = Product Longevity Program (PLP) 08 = 8-bit 16 = 16-bit Operating Temperature Range Level AIT = Automotive Industrial (40C to +85C) A= SLC Classification Mark Die nCE RnB I/O Channels Speed Grade B 1 1 1 1 Blank Operating Voltage Range Package Code A = 3.3V (2.73.6V) WP = 48-pin TSOP Type 1 B = 1.8V (1.71.95V) HC = 63-ball VFBGA (10.5 x 13 x 1.0mm) H4 = 63-ball VFBGA (9 x 11 x 1.0mm) Feature Set E = Feature set E Interface A = Async only PDF: 09005aef859aa17c Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m68m non ecc automotive.pdf Rev. C 01/15 EN 2014 Micron Technology, Inc. All rights reserved.