Micron Confidential and Proprietary
1Gb x8, x16: NAND Flash Memory
Features
NAND Flash Memory
MT29F1G08ABADAWP, MT29F1G08ABBDAH4,
MT29F1G08ABBDAHC, MT29F1G16ABBDAH4,
MT29F1G16ABBDAHC, MT29F1G08ABADAH4
Ready/busy# (R/B#) signal provides a hardware
Features
method for detecting operation completion
1
Open NAND Flash Interface (ONFI) 1.0-compliant
WP# signal: write protect entire device
Single-level cell (SLC) technology
First block (block address 00h) is valid when ship-
Organization
ped from factory with ECC. For minimum required
Page size x8: 2112 bytes (2048 + 64 bytes)
ECC, see Error Management.
Page size x16: 1056 words (1024 + 32 words)
Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-
Block size: 64 pages (128K + 4K bytes)
cles are less than 1000
Device size: 1Gb: 1024 blocks
RESET (FFh) required as first command after pow-
Asynchronous I/O performance
er-on
t t
RC/ WC: 20ns (3.3V), 25ns (1.8V)
Alternate method of device initialization (Nand_In-
4
Array performance
it) after power up (contact factory)
3
Read page: 25s
Quality and reliability
3
Program page: 200s (TYP, 3.3V and 1.8V)
Data retention: 10 years
Erase block: 700s (TYP)
Endurance: 100,000 PROGRAM/ERASE cycles
Command set: ONFI NAND Flash Protocol
Operating Voltage Range
Advanced command set
V : 2.73.6V
CC
5
Program page cache mode
V : 1.71.95V
CC
5
Read page cache mode
Operating temperature:
One-time programmable (OTP) mode
Commercial: 0C to +70C
Read unique ID
Extended (ET): 40C to +85C
Internal data move
Package
2
Operation status byte provides software method for
48-pin TSOP type 1, CPL
detecting
63-ball VFBGA
Operation completion
1. The ONFI 1.0 specification is available at
Notes:
Pass/fail condition
www.onfi.org.
Write-protect status
2. CPL = Center parting line.
Internal data move operations supported within the
t
3. See Electrical Specifications for R_ECC and
device from which data is read
t
PROG_ECC specifications.
4. Available only in the 1.8V VFBGA package.
5. Supported only with ECC disabled.
PDF: 09005aef83e5ffed Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
m68a_1gb_nand.pdf - Rev. R 1/18 EN 2010 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary
1Gb x8, x16: NAND Flash Memory
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Microns part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Marketing Part Number Chart
MT 29F 1G 08 A B B D A HC IT ES :D
Micron Technology
Design Revision (shrink)
Product Family Production Status
29F = NAND Flash memory Blank = Production
ES = Engineering sample
Density MS = Mechanical sample
1G = 1Gb QS = Qualification sample
Device Width
Special Options
08 = 8-bit
Blank
16 = 16-bit X = Premium lifecycle product (PLP)
Operating Temperature Range
Level
Blank = Commercial (0C to +70C)
A= SLC
IT = Industrial (40C to +85C)
Classification
Mark Die nCE RnB I/O Channels Speed Grade
B 1 1 1 1 Blank
Package Code
Operating Voltage Range
WP = 48-pin TSOP 1
A = 3.3V (2.73.6V)
HC = 63-ball VFBGA (10.5 x 13 x 1.0mm)
B = 1.8V (1.71.95V)
H4 = 63-ball VFBGA (9 x 11 x 1.0mm)
Feature Set
D = Feature set D Interface
A = Async only
PDF: 09005aef83e5ffed Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
m68a_1gb_nand.pdf - Rev. R 1/18 EN 2010 Micron Technology, Inc. All rights reserved.