Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Features
NAND Flash Memory
MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4,
MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP,
MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,
MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4,
MT29F16G08AJADAWP
First block (block address 00h) is valid when ship-
Features
ped from factory with ECC. For minimum required
1
Open NAND Flash Interface (ONFI) 1.0-compliant
ECC, see Error Management.
Single-level cell (SLC) technology
Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-
Organization
cles are less than 1000
Page size x8: 2112 bytes (2048 + 64 bytes)
RESET (FFh) required as first command after pow-
Page size x16: 1056 words (1024 + 32 words)
er-on
Block size: 64 pages (128K + 4K bytes)
Alternate method of device initialization (Nand_In-
Plane size: 2 planes x 2048 blocks per plane
it) after power up (contact factory)
Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks
Internal data move operations supported within the
16Gb: 16,384 blocks
plane from which data is read
Asynchronous I/O performance
Quality and reliability
t t
RC/ WC: 20ns (3.3V), 25ns (1.8V)
Data retention: 10 years
Array performance
Endurance: 100,000 PROGRAM/ERASE cycles
3
Read page: 25s
Operating voltage range
3
Program page: 200s (TYP: 1.8V, 3.3V)
V : 2.73.6V
CC
Erase block: 700s (TYP)
V : 1.71.95V
CC
Command set: ONFI NAND Flash Protocol
Operating temperature:
Advanced command set
Commercial: 0C to +70C
4
Program page cache mode
Industrial (IT): 40C to +85C
4
Read page cache mode
Automotive Industrial (AIT): 40C to +85C
One-time programmable (OTP) mode
Automotive (AAT): 40C to +105C
4
Two-plane commands
Package
2
Interleaved die (LUN) operations
48-pin TSOP type 1, CPL
Read unique ID
63-ball VFBGA
Block lock (1.8V only)
1. The ONFI 1.0 specification is available at
Notes:
Internal data move
www.onfi.org.
Operation status byte provides software method for
2. CPL = Center parting line.
detecting
3. See Program and Erase Characteristics for
Operation completion
t t
R_ECC and PROG_ECC specifications.
Pass/fail condition
4. These commands supported only with ECC
Write-protect status
disabled.
Ready/Busy# (R/B#) signal provides a hardware
method of detecting operation completion
WP# signal: Write protect entire device
PDF: 09005aef83b25735 Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Microns part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Marketing Part Number Chart
MT 29F 4G 08 A B A D A WP IT ES :D
Micron Technology
Design Revision (shrink)
Product Family
Production Status
29F = NAND Flash memory
Blank = Production
ES = Engineering sample
Density
MS = Mechanical sample
4G = 4Gb
QS = Qualification sample
8G = 8Gb
16G = 16Gb
Special Options
Blank
Device Width
X = Product longevity program (PLP)
08 = 8-bit
16 = 16-bit
Operating Temperature Range
Blank = Commercial (0C to +70C)
Level
IT = Industrial (40C to +85C)
A = SLC
AIT = Automotive Industrial (40C to +85C)
AAT = Automotive (40C to +105C)
Classification
Mark Die nCE RnB I/O Channels
B 1 1 1 1
Speed Grade
D 2 1 1 1
Blank
J 4 2 2 1
Package Code
Operating Voltage Range WP = 48-pin TSOP Type 1
HC = 63-ball VFBGA (10.5 x 13 x 1.0mm)
A = 3.3V (2.73.6V)
B = 1.8V (1.71.95V) H4 = 63-ball VFBGA (9 x 11 x 1.0mm)
Interface
Feature Set
A = Async only
D = Feature set D
PDF: 09005aef83b25735 Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. R 02/18 EN 2009 Micron Technology, Inc. All rights reserved.