X-On Electronics has gained recognition as a prominent supplier of MT29F8G08ABABAWP-AATX:B TR NAND Flash across the USA, India, Europe, Australia, and various other global locations. MT29F8G08ABABAWP-AATX:B TR NAND Flash are a product manufactured by Micron. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

MT29F8G08ABABAWP-AATX:B TR Micron

MT29F8G08ABABAWP-AATX:B TR electronic component of Micron
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Part No.MT29F8G08ABABAWP-AATX:B TR
Manufacturer: Micron
Category: NAND Flash
Description: NAND Flash SLC 8G 1GX8 TSOP
Datasheet: MT29F8G08ABABAWP-AATX:B TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1000
1000 : USD 11.5114
10000 : USD 11.0441
100000 : USD 10.8233
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 13.2235
10 : USD 12.1988
25 : USD 11.9617
50 : USD 11.8109
100 : USD 11.1751
250 : USD 10.6902
500 : USD 10.6254
1000 : USD 10.1189
N/A

Obsolete
   
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RoHS - XON
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Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
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We are delighted to provide the MT29F8G08ABABAWP-AATX:B TR from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT29F8G08ABABAWP-AATX:B TR and other electronic components in the NAND Flash category and beyond.

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Micron Confidential and Proprietary 8Gb Automotive Asynchronous NAND Flash Memory Features Automotive Asynchronous NAND Flash Memory MT29F8G08ABABAWP-AATX:B Operation status byte provides software method for Features detecting 1 Open NAND Flash Interface (ONFI) 2.1-compliant Operation completion Single-level cell (SLC) technology Pass/fail condition Organization Write-protect status Page size x8: 4320 bytes (4096 + 224 bytes) Copyback operations supported within the plane Block size: 128 pages (512K +28 K bytes) from which data is read Plane size: 2 planes x 1024 blocks per plane Quality and reliability Device size: 8Gb: 2048 blocks Data retention: 10 years Asynchronous I/O performance Endurance: 100,000 PROGRAM/ERASE cycles Up to asynchronous timing mode 4 Operating temperature: t t RC/ WC: 25ns (MIN) Automotive (AAT): 40C to +105C Array performance Package Read page: 25s (MAX) 48-pin TSOP Program page: 230s (TYP) Erase block: 700s (TYP) 1. The ONFI 2.1 specification is available at Note: Operating Voltage Range www.onfi.org. V : 2.73.6V CC V : 2.73.6V CCQ Command set: ONFI NAND Flash Protocol Advanced Command Set Program cache Read cache sequential Read cache random One-time programmable (OTP) mode Multi-plane commands Multi-LUN operations Read unique ID Copyback First block (block address 00h) is valid when ship- ped from factory. For minimum required ECC, see Error Management (page 80). RESET (FFh) required as first command after pow- er-on Alternate method of device initialization (Nand In- it) after power up (contact factory) PDF: 09005aef85e656c8 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m61a automotive 105C async nand.pdf - Rev. B 06/15 EN Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 8Gb Automotive Asynchronous NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Part Numbering MT 29F 8G 08 A B A B A WP AA T ES :B Micron Technology Design Revision B = Second revision NAND Flash 29F = NAND Flash memory Production Status Blank = Production ES = Engineering sample Density 8G = 8Gb Special Options Blank Device Width X = Product longevity program (PLP) 08 = 8 bits Operating Temperature Range Level AAT = Automotive (40C to +105C) Bit/Cell A 1-bit Package Code 1 WP = 48-pin TSOP (CPL) Classification Die of CE of R/B I/O Interface B 1 1 1 Common A = Async only 1 Operating Voltage Range A = V : 3.3V (2.73.6V), V : 3.3V (2.73.6V) CC CCQ Generation Feature Set B = Second set of device features 1. Pb-free package. Note: PDF: 09005aef85e656c8 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m61a automotive 105C async nand.pdf - Rev. B 06/15 EN Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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