MT29F8G08ABBCAH4-IT:C Micron

Micron Confidential and Proprietary 8Gb,16Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F8G08ABACA, MT29F8G16ABACA, MT29F8G08ABBCA, MT29F8G16ABBCA, MT29F16G08ADACA, MT29F16G16ADACA, MT29F16G08ADBCA , MT29F16G16ADBCA First block (block address 00h) is valid when ship- Features ped from factory with ECC. For minimum required 1 Open NAND Flash Interface (ONFI) 1.0-compliant ECC, see Error Management. Single-level cell (SLC) technology RESET (FFh) required as first command after Organization power-on Page size x8: 4320 bytes (4096 + 224 bytes) Alternative method of device initialization after Page size x16: 2160 words (2048 + 112 words) power-up (contact factory) Block size: 64 pages (256K + 14K bytes) Internal data move operations supported within the Plane size: 2 planes x 2048 blocks per plane plane from which data is read Device size: 8Gb: 4096 blocks Quality and reliability Device size: 16Gb: 8192 blocks Data retention: JESD47G-compliant see qualifi- Asynchronous I/O performance cation report t t RC/ WC: 20ns (3.3V), 30ns (1.8V) Endurance: See qualification report Array performance Operating voltage range Read page: 25s V : 2.73.6V CC Program page: 200s (TYP) V : 1.71.95V CC Erase block: 2ms (TYP) Operating temperature Command set: ONFI NAND Flash Protocol Commercial: 0C to +70C Advanced command set Industrial (IT): 40C to +85C Program page cache mode Package 2 Read page cache mode 48-pin TSOP type 1, CPL One-time programmable (OTP) mode 63-ball VFBGA Block lock (1.8V only) 1. The ONFI 1.0 specification is available at Notes: Programmable drive strength www.onfi.org. Two-plane commands 2. CPL = Center parting line Multi-die (LUN) operations Read unique ID Internal data move Operation status byte provides software method for detecting Operation completion Pass/fail condition Write-protect status Ready/Busy (R/B ) signal provides a hardware method of detecting operation completion WP signal: Write protect entire device PDF: 09005aef83ea4f61 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m71m 8Gb nand.pdf Rev. L 1/12 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 8Gb,16Gb: x8, x16 NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 8G 08 A B A C A WP xx xx x ES :C Micron Technology Design Revision (shrink) Product Family Production Status 29F = NAND Flash memory Blank = Production ES = Engineering sample Density MS = Mechanical sample 8G = 8Gb QS = Qualification sample 16G = 16Gb Reserved for Future Use Device Width Blank 08 = 8-bit 16 = 16-bit Operating Temperature Range Blank = Commercial (0C to +70C) Level IT = Industrial (40C to +85C) A = SLC Speed Grade Classification Blank Mark Die nCE RnB I/O Channels B 1 1 1 1 Package Code D 2 1 1 1 H4 = 63-ball VFBGA (9 x 11 x 1.0mm) WP = 48-pin TSOP CPL Type 1 Operating Voltage Range A = 3.3V (2.73.6V) Interface B = 1.8V (1.71.95V) A = Async only B = Sync/Async Feature Set C = Feature set C PDF: 09005aef83ea4f61 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m71m 8Gb nand.pdf Rev. L 1/12 EN 2010 Micron Technology, Inc. All rights reserved.