X-On Electronics has gained recognition as a prominent supplier of MT41K128M8DA-107:J DRAM across the USA, India, Europe, Australia, and various other global locations. MT41K128M8DA-107:J DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT41K128M8DA-107:J Micron

MT41K128M8DA-107:J electronic component of Micron
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Part No.MT41K128M8DA-107:J
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip DDR3L SDRAM 1Gbit 128Mx8 1.35V 78-Pin FBGA
Datasheet: MT41K128M8DA-107:J Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.1051 ea
Line Total: USD 5.11 
Availability - 221
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
221
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 5.1051
10 : USD 4.641
25 : USD 4.5946
40 : USD 4.5495
80 : USD 4.0554
230 : USD 3.8438
440 : USD 3.7087
1440 : USD 3.5203

   
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We are delighted to provide the MT41K128M8DA-107:J from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT41K128M8DA-107:J and other electronic components in the DRAM category and beyond.

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1Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K256M4 32 Meg x 4 x 8 banks MT41K128M8 16 Meg x 8 x 8 banks MT41K64M16 8 Meg x 16 x 8 banks Write leveling Description Multipurpose register The 1.35V DDR3L SDRAM device is a low-voltage ver- Output driver calibration sion of the 1.5V DDR3 SDRAM device. Refer to the 1 Options Marking DDR3 (1.5V) SDRAM data sheet specifications when Configuration running in 1.5V compatible mode. 256 Meg x 4 256M4 Features 128 Meg x 8 128M8 V = V = +1.35V (1.283V to 1.45V) DD DDQ 64 Meg x 16 64M16 Backward compatible to V = V = 1.5V 0.075V DD DDQ FBGA package (Pb-free) x4, x8 Differential bidirectional data strobe 78-ball FBGA (8mm x 11.5mm) Rev. JP 8n-bit prefetch architecture G Differential clock inputs (CK, CK ) 78-ball FBGA (8mm x 10.5mm) Rev. J DA 8 internal banks FBGA package (Pb-free) x16 Nominal and dynamic on-die termination (ODT) 96-ball FBGA (8mm x 14mm) Rev. G JT for data, strobe, and mask signals 96-ball FBGA (8mm x 14mm) Rev. J TW Programmable CAS (READ) latency (CL) Timing cycle time Programmable CAS additive latency (AL) 1.07ns CL = 13 (DDR3-1866) -107 Programmable CAS (WRITE) latency (CWL) 1.25ns CL = 11 (DDR3-1600) -125 Fixed burst length (BL) of 8 and burst chop (BC) of 4 1.5ns CL = 9 (DDR3-1333) -15E (via the mode register set MRS ) 1.87ns CL = 7 (DDR3-1066) -187E Selectable BC4 or BL8 on-the-fly (OTF) Operating temperature Self refresh mode Commercial (0C T +95C) None C T of 0C to 95C C Industrial (40C T +95C) IT C 64ms, 8192-cycle refresh at 0C to 85C Revision :G / :J 32ms at 85C to 95C 1. Not all options listed can be combined to Note: Self refresh temperature (SRT) define an offered product. Use the part Automatic self refresh (ASR) catalog search on 1Gb: x4, x8, x16 DDR3L SDRAM Description Table 2: Addressing Parameter 256 Meg x 4 128 Meg x 8 64 Meg x 16 Configuration 32 Meg x 4 x 8 banks 16 Meg x 8 x 8 banks 8 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row address 16K A 13:0 16K A 13:0 8K A 12:0 Bank address 8 BA 2:0 8 BA 2:0 8 BA 2:0 Column address 2K A 11, 9:0 1K A 9:0 1K A 9:0 Page Size 1KB 1KB 2KB Figure 1: DDR3 Part Numbers Example Part Number: MT41K256M4DA-125:J - : MT41K Configuration Package Speed Revision :G / :J Revision Configuration Temperature 256 Meg x 4 256M4 Commercial None 128 Meg x 8 128M8 Industrial temperature IT 64 Meg x 16 64M16 Package Rev. Mark Speed Grade t 78-ball 8mm x 11.5mm FBGA G JP -107 CK = 1.07ns, CL = 13 t 96-ball 8mm x 14mm FBGA -125 G JT CK = 1.25ns, CL = 11 t 78-ball 8mm x 10.5mm FBGA J DA -15E CK = 1.5ns, CL = 9 t 96-ball 8mm x 14mm FBGA J TW -187E CK = 1.87ns, CL = 7 1. Not all options listed can be combined to define an offered product. Use the part catalog search on Note:

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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