X-On Electronics has gained recognition as a prominent supplier of MT42L32M32D1HE-18 AAT:D DRAM across the USA, India, Europe, Australia, and various other global locations. MT42L32M32D1HE-18 AAT:D DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT42L32M32D1HE-18 AAT:D Micron

MT42L32M32D1HE-18 AAT:D electronic component of Micron
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See Product Specifications
Part No.MT42L32M32D1HE-18 AAT:D
Manufacturer: Micron
Category: DRAM
Description: DRAM DRAM LPDDR2 U08M 1G
Datasheet: MT42L32M32D1HE-18 AAT:D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 12.0555 ea
Line Total: USD 12.06

Availability - 1474
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
822
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 8.763
10 : USD 8.0615
25 : USD 7.8315
100 : USD 7.2565
250 : USD 7.038
500 : USD 7.038
1000 : USD 6.7965
2500 : USD 6.67
4560 : USD 6.4975

   
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We are delighted to provide the MT42L32M32D1HE-18 AAT:D from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT42L32M32D1HE-18 AAT:D and other electronic components in the DRAM category and beyond.

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Preliminary 1Gb: x16, x32 Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L64M16D1, MT42L32M32D1 Options Marking Features V : 1.2V L DD2 Ultra low-voltage core and I/O power supplies Configuration V = 1.141.30V DD2 8 Meg x 16 x 8 banks x 1 die 64M16 V /V = 1.141.30V DDCA DDQ 4 Meg x 32 x 8 banks x 1 die 32M32 V = 1.701.95V DD1 Device type Clock frequency range LPDDR2-S4, 1 die in package D1 53310 MHz (data rate range: 106620 Mb/s/pin) FBGA green package Four-bit prefetch DDR architecture 134-ball FBGA (10mm x HE Eight internal banks for concurrent operation 11.5mm) Multiplexed, double data rate, command/address Timing cycle time inputs commands entered on every CK edge 1.875ns RL = 8 -18 Bidirectional/differential data strobe per byte of 2.5ns RL = 6 -25 data (DQS/DQS ) Special options Programmable READ and WRITE latencies (RL/WL) Automotive grade (Package-level A Programmable burst lengths: 4, 8, or 16 burn-in) Per-bank refresh for concurrent operation Operating temperature range On-chip temperature sensor to control self refresh From 40C to +85C IT rate From 40C to +105C AT Partial-array self refresh (PASR) Revision :A Deep power-down mode (DPD) t t 1. For Fast RCD/ RP, contact factory. Note: Selectable output drive strength (DS) Clock stop capability RoHS-compliant, green packaging Table 1: Key Timing Parameters Speed Clock Rate Data Rate t t 1 Grade (MHz) (Mb/s/pin) RL WL RCD/ RP -18 533 1066 8 4 Typical -25 400 800 6 3 Typical PDF: 09005aef85d5f0c6 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 1gb mobile lpddr2 u88m ait aat.pdf - Rev. B 12/14 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Microns production data sheet specifications.Preliminary 1Gb: x16, x32 Automotive Mobile LPDDR2 SDRAM Features Table 2: Single Channel S4 Configuration Addressing Architecture 64 Meg x 16 32 Meg x 32 Die 8 Meg x 16 x 8 banks 4 Meg x 32 x 8 banks configuration Row addressing 8K (A 12:0 ) 8K (A 12:0 ) Column 1K (A 9:0 ) 512 (A 8:0 ) addressing Number of die 1 1 Die per rank 1 1 1 Ranks per channel 11 Note: 1. A channel is a complete LPDRAM interface, including command/address and data pins. PDF: 09005aef85d5f0c6 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 1gb mobile lpddr2 u88m ait aat.pdf - Rev. B 12/14 EN 2014 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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