X-On Electronics has gained recognition as a prominent supplier of MT47H64M16HR-3:H DRAM across the USA, India, Europe, Australia, and various other global locations. MT47H64M16HR-3:H DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT47H64M16HR-3:H Micron

MT47H64M16HR-3:H electronic component of Micron
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Part No. MT47H64M16HR-3:H
Manufacturer: Micron
Category: DRAM
Description: MT47H64M16HR-3:H
16Gb DRAM integrated circuit with low power consumption for embedded applications.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.7384 ea
Line Total: USD 3.74 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1
Multiples : 1
1 : USD 3.7384

   
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Product Category
RoHS - XON
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We are delighted to provide the MT47H64M16HR-3:H from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT47H64M16HR-3:H and other electronic components in the DRAM category and beyond.

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MT47H64M16HR-3:H is a 64Mb synchronous dynamic random access memory (SDRAM) designed by Micron Technology. It has a 16-bit data bus and runs at 133MHz with a 3.3V supply voltage. It features 4 banks, and four internal banks of 4M x 16 and a burst length of 4. It also has a built-in Refresh function. This chip also has 7 address lines, CAS and RAS latency of 3 cycles and an output drive strength of 30 ohms.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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