X-On Electronics has gained recognition as a prominent supplier of MT48H8M16LFB4-75 IT:K TR DRAM across the USA, India, Europe, Australia, and various other global locations. MT48H8M16LFB4-75 IT:K TR DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT48H8M16LFB4-75 IT:K TR Micron

MT48H8M16LFB4-75 IT:K TR electronic component of Micron
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Part No.MT48H8M16LFB4-75 IT:K TR
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip Mobile SDRAM 128Mbit 8Mx16 1.8V 54-Pin VFBGA T/R
Datasheet: MT48H8M16LFB4-75 IT:K TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 4.4105 ea
Line Total: USD 4410.5 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 4.4105

   
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We are delighted to provide the MT48H8M16LFB4-75 IT:K TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT48H8M16LFB4-75 IT:K TR and other electronic components in the DRAM category and beyond.

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128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM MT48H8M16LF 2 Meg x 16 x 4 banks MT48H4M32LF 1 Meg x 32 x 4 banks Options Marking Features V /V : 1.8V/1.8V H DD DDQ V /V = 1.71.95V DD DDQ Addressing Fully synchronous all signals registered on positive Standard addressing option LF edge of system clock Configuration Internal, pipelined operation column address can 8 Meg x 16 (2 Meg x 16 x 4 banks) 8M16 be changed every clock cycle 4 Meg x 32 (1 Meg x 32 x 4 banks) 4M32 Plastic green packages 4 internal banks for concurrent operation 1 54-ball VFBGA (8mm x 8mm) B4 Programmable burst lengths (BL): 1, 2, 4, 8, and con- 2 90-ball VFBGA (8mm x 13mm) B5 tinuous Timing: cycle time Auto precharge, includes concurrent auto precharge 6ns at CL = 3 -6 Auto refresh and self refresh modes 7.5ns at CL = 3 -75 LVTTL-compatible inputs and outputs Operating temperature range On-chip temperature sensor to control self refresh Commercial (0C to +70C) None rate Industrial (40C to +85C) IT Revision :K Partial-array self refresh (PASR) Deep power-down (DPD) 1. Available only for x16 configuration. Notes: Selectable output drive strength (DS) 2. Available only for x32 configuration. 64ms refresh period Table 1: Configuration Addressing Architecture 8 Meg x 16 4 Meg x 32 Number of banks 4 4 Bank address balls BA0, BA1 BA0, BA1 Row address balls A 11:0 A 11:0 Column address balls A 8:0 A 7:0 Table 2: Key Timing Parameters Clock Rate (MHz) Access Time Speed Grade CL = 2 CL = 3 CL = 2 CL = 3 -6 104 166 8ns 5ns -75 104 133 8ns 5.4ns Note: 1. CL = CAS (READ) latency PDF: 09005aef832ff1ea Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 128mb mobile sdram y35M.pdf - Rev. G 10/09 EN 2008 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM Features Figure 1: 128Mb Mobile LPSDR Part Numbering MT 48 H 8M16 LF B4 -6 IT :K Micron Technology Revision :K Product Family 48 = Mobile SDR SDRAM Operating Temperature Blank = Commercial (0C to +70C) Operating Voltage IT = Industrial (40C to +85C) H = 1.8V/1.8V Cycle Time t Configuration -6 = 6ns, CK CL = 3 t 8 Meg x 16 -75 = 7.5ns, CK CL = 3 4 Meg x 32 Package Codes Addressing B4 = 8mm x 8mm VFBGA green LF = Mobile standard addressing B5 = 8mm x 13mm VFBGA green FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. Microns FBGA part marking decoder is available at www.micron.com/decoder. PDF: 09005aef832ff1ea Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 128mb mobile sdram y35M.pdf - Rev. G 10/09 EN 2008 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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