MTA9ASF51272AZ-2G6B1 Micron

4GB (x72, ECC, SR) 288-Pin DDR4 UDIMM Features DDR4 SDRAM UDIMM MTA9ASF51272AZ 4GB Figure 1: 288-Pin UDIMM (MO-309, R/C D1) Features Module height: 31.25mm (1.23in) DDR4 functionality and operations supported as de- fined in the component data sheet 288-pin, unbuffered dual in-line memory module (UDIMM) Fast data transfer rates: PC4-2600, PC4-2400, and PC4-2133 Options Marking 4GB (512 Meg x 72) Operating temperature V = 1.20V (NOM) DD Commercial None V = 2.5V (NOM) PP (0C T 95C) OPER V = 2.5V (NOM) DDSPD Package Supports ECC error detection and correction 288-pin DIMM (halogen-free) Z Nominal and dynamic on-die termination (ODT) for Frequency/CAS latency data, strobe, and mask signals 0.75ns CL = 19 (DDR4-2666) -2G6 0.83ns CL = 17 (DDR4-2400) -2G3 Low-power auto self refresh (LPASR) 0.93ns CL = 15 (DDR4-2133) -2G1 Data bus inversion (DBI) for data bus On-die V generation and calibration REFDQ Single-rank 2 On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM 16 internal banks 4 groups of 4 banks each Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) CL = Industry 20, t t t Speed Nomen- CL = CL = CL = CL = CL = CL = CL = CL = CL = CL = RCD RP RC Grade clature 19 18 17 16 15 14 13 12 11 10 CL = 9 (ns) (ns) (ns) -2G6 PC4-2666 2666 2666 2400 2133 2133 1866 1866 1600 1333 14.16 14.16 46.16 -2G4 PC4-2400 2400 2400 2400 2133 1866 1866 1600 1600 1333 13.32 13.32 45.32 -2G3 PC4-2400 2400 2400 2133 2133 1866 1866 1600 1600 1333 14.16 14.16 46.16 -2G1 PC4-2133 2133 2133 1866 1866 1600 1600 1333 13.5 13.5 46.5 PDF: 09005aef8519d7ca Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 asf9c512x72az.pdf Rev. J 11/15 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.4GB (x72, ECC, SR) 288-Pin DDR4 UDIMM Features Table 2: Addressing Parameter 4GB Row address 32K A 14:0 Column address 1K A 9:0 Device bank group address 4 BG 1:0 Device bank address per group 4 BA 1:0 Device configuration 4Gb (512 Meg x 8), 16 banks Module rank address CS0 n Table 3: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT40A512M8, 4Gb DDR4 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MTA9ASF51272AZ-2G6 4GB 512 Meg x 72 21.3 GB/s 0.75ns/2666 MT/s 19-19-19 MTA9ASF51272AZ-2G3 4GB 512 Meg x 72 19.2 GB/s 0.83ns/2400 MT/s 17-17-17 MTA9ASF51272AZ-2G1 4GB 512 Meg x 72 17.0 GB/s 0.93ns/2133 MT/s 15-15-15 Notes: 1. The data sheet for the base device can be found at micron.com. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MTA9ASF51272AZ-2G6B1. PDF: 09005aef8519d7ca Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 asf9c512x72az.pdf Rev. J 11/15 EN 2013 Micron Technology, Inc. All rights reserved.