1100 2.5-Inch and M.2 NAND Flash SSD Features 1100 2.5-Inch and M.2 SATA NAND Flash SSD MTFDDAK256TBN, MTFDDAK512TBN, MTFDDAK1T0TBN, MTFDDAK2T0TBN, MTFDDAV256TBN, MTFDDAV512TBN, MTFDDAV1T0TBN Reliability Features 3 MTTF: 1.5 million device hours Micron 3D TLC NAND Flash Static and dynamic wear leveling RoHS-compliant package Uncorrectable bit error rate (UBER): <1 sector 15 SATA 6 Gb/s interface per 10 bits read TCG/Opal 2.0-compliant self-encrypting drive Low power consumption (SED) Device Sleep numbers: <4mW 4 Compatible with Microsoft eDrive DIPM numbers: 110mW TYP Hardware-based AES-256 encryption engine Endurance: Total bytes written (TBW) ATA modes supported 120TB PIO mode 3, 4 Capacity (unformatted): 128GB Multiword DMA mode 0, 1, 2 2.5-inch 7mm form factor Ultra DMA mode 0, 1, 2, 3, 4, 5, 6 Secure firmware update with digitally signed firm- Industry-standard, 512-byte sector size support ware image Hot-plug/hot-remove capable (2.5 ) Operating temperature 5 Device sleep (DEVSLP), extreme low-power mode Commercial (0C to +70C) Native command queuing support with 32-com- mand slot support 1. Typical I/O performance numbers as meas- Notes: ATA-8 ACS3 command set compliant ured fresh-out-of-the-box (FOB) using Iome- ter with a queue depth of 32 and write ATA security feature command set and password cache enabled. login support 2. 4 KB transfers used for READ/WRITE latency Secure erase (data page) command set: fast and se- values. cure erase 3. The product achieves a mean time to failure Sanitize device feature set support (MTTF) based on population statistics not Self-monitoring, analysis, and reporting technology relevant to individual units. (SMART) command set 4. Active average power measured during exe- Dynamic write acceleration cution of MobileMark with DIPM (device- Adaptive thermal monitoring initiated power management) enabled. Power loss protection for data-at-rest 5. Temperature measured by SMART attribute 1, 2 Performance 194. PCMark Vantage (HDD test suite score): Up to 84,000 Warranty: Contact your Micron sales representative Sequential 128KB READ: Up to 530 MB/s for further information regarding the product, Sequential 128KB WRITE: Up to 500 MB/s including product warranties. Random 4KB READ: Up to 55,000 IOPS Random 4KB WRITE: Up to 83,000 IOPS READ/WRITE latency: 85s/40s (TYP) CCMTD-1725822587-10292 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 1100 ssd.pdf - Rev. D 10/17 EN 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1100 2.5-Inch and M.2 NAND Flash SSD Features Part Numbering Information Microns 1100 SSD is available in different configurations and densities. The chart below is a comprehensive list of options for the 1100 series devices not all options listed can be combined to define an offered product. Visit www.micron.com for a list of valid part numbers. Figure 1: Part Number Chart MT FD D AK 256 T BN - 1 AR 1 2 AB YY ES Production Status Micron Technology Blank = Production ES = Engineering sample Product Family FD = Flash drive Customer Designator Drive Interface YY = Standard D = SATA 6.0 Gb/s Feature Set Drive Form Factor AB = Standard AK = 2.5-inch (7mm) TA = TAA Compliant AV = M.2 (80mm x 22mm) ZZ = Blank Extended Firmware Features Drive Density Z = Non-Encrypted 256 = 256GB 2 = SED (self-encrypting drive) 512 = 512GB 1T0 = 1024GB Sector Size 2T0 = 2048GB 1 = 512 byte NAND Flash Type NAND Flash Component T = TLC AR = 384Gb, TLC, x16, 1.8V (3D) BOM Revision Product Family For example: BN = 1100 1 = 1st generation 2 = 2nd generation CCMTD-1725822587-10292 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 1100 ssd.pdf - Rev. D 10/17 EN 2015 Micron Technology, Inc. All rights reserved.