VEMD8080 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface-mount Package form: top view Dimensions (L x W x H in mm): 4.8 x 2.5 x 0.48 2 Radiant sensitive area (in mm ): 4.5 0.48 mm low profile package Enhanced sensitivity for visible light Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 65 Floor life: 168 h, MSL 3, according to J-STD-020 DESCRIPTION Material categorization: for definitions of compliance VEMD8080 is a high speed and high sensitive PIN please see www.vishay.com/doc 99912 photodiode with enhanced sensitivity for visible light. It is a low profile surface-mount device (SMD) including the chip APPLICATIONS 2 with a 4.5 mm sensitive area detecting visible and near High speed photo detector infrared radiation. Wearables PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 VEMD8080 28 65 350 to 1100 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD8080 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 20 V R Junction temperature T 85 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +85 C stg Soldering temperature According to reflow solder profile Fig. 8 T 260 C sd Thermal resistance junction-to-ambient R 350 K/W thJA ESD safety HBM 2000 V, 1.5 k, 100 pF, 3 pulses ESD 2 kV HBM Rev. 1.0, 24-Apr-2018 Document Number: 84565 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VEMD8080 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V -1.2 1.6 V F F Breakdown voltage I = 100 A, E = 0 V 20 - - V R (BR) Reverse dark current V = 10 V, E = 0 I -0.2 10 nA R ro V = 0 V, f = 1 MHz, E = 0 C -47 - pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C -17 40 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V - 320 - mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK --3.0- mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I -32 - A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK -0.1 - %/K k e Ik 2 E = 1 mW/cm , = 850 nm, V = 5 V I 23 28 33 A e R ra Reverse light current 2 E = 0.25 mW/cm , = 525 nm, V = 5 V I 3.4 4.4 5.3 A e R ra Angle of half sensitivity - 65 - deg Wavelength of peak sensitivity - 850 - nm p Range of spectral bandwidth - 350 to 1100 - nm 0.1 Rise time V = 10 V, R = 1 k, = 830 nm t -70 - ns R L r Fall time V = 10 V, R = 1 k, = 830 nm t -70 - ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.2 2 V = 10 V E = 1 mW/cm R e = 950 nm V = 5 V R 100 1.1 10 1 1 0.9 0.1 0.8 0 20406080 -40 -20 0 20406080 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.0, 24-Apr-2018 Document Number: 84565 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Dark Current (nA) ro I - Relative Reverse Light Current ra rel