MMIC HSWA2-63DR+ SP2T RF Switch Absorptive RF Switch with internal driver Single Supply Voltage, +2.7V to +5.5V The Big Deal High Isolation, 69 dB at 1.0 GHz High Input IP3, +65 dBm Fast switching, 300 ns Tiny Size, 4x4mm CASE STYLE: DG983-3 Immune to latch-up Product Overview Mini-Circuits HSWA2-63DR+ is a MMIC SPDT absorptive switch with an internal driver designed for wideband operation from 100 MHz to 6.0 GHz supporting many applications requiring high performance across a wide frequency range. This model provides excellent isolation, fast switching speed and high linearity in a tiny 4x4mm 20-Lead MCLP package. Produced using a unique CMOS process on silicon, it offers the performance of GaAs with the advantages of conventional CMOS devices. HSWA2-63DR+ provides a high level of ESD protection and excellent repeatability. Key Features Feature Advantages One model can be used in many applications, saving component count. Also ideal for Wideband, 100 MHz to 6.0 GHz wideband applications such as military and instrumentation. Usable over 1kHz to 6 GHz With lower input power it can operate over 1kHz to 6 GHz covering even wider applica- tions In the off condition, RF output ports which are not switched ON are terminated into Absorptive switch 50. This enables proper impedance termination of the circuitry following the RF out- put ports, preventing any unintended action such as oscillation. High Isolation: 71 dB at 1000 MHz High isolation significantly reduces leakage of power into OFF ports. 48 dB at 6000 MHz High linearity minimizes unwanted intermodulation products which are difficult or High linearity, +65 dBm IIP3 impossible to filter in multi-carrier environments such as CATV, or in the presence of strong interfering signal from adjacent circuitry or received by antenna. Immune to Latch-up Unlike conventional CMOS devices, HSWA is immune to latch-up Tiny footprint saves space in dense layouts while providing low inductance, repeatable Tiny size, 4 x 4mm MCLP package transitions, and excellent thermal contact to the PCB. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 1 of 5SP2T RF Switch 50 100 MHz - 6 GHz Absorptive RF Switch with internal driver Single Supply Voltage, +2.7V to +5.5V Product Features High Isolation, 69 dB typ. at 1 GHz Low insertion loss, 0.95 dB typ. at 1 GHz Generic photo used for illustration purposes only High Input IP3, 65 dBm typ. CASE STYLE: DG983-3 Fast switching time, 300 ns typ. Low current consumption, 120 A typ. HSWA2-63DR+ Wide bandwidth, 100-6000 MHz, usable over 1kHz-6000 MHz Immune to latch-up +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site Typical Applications for RoHS Compliance methodologies and qualifications Defense Test and Measurements Switch matrices General Description HSWA2-63DR+ is a high isolation absorptive SPDT switch with integral CMOS driver, operates with single positive supply voltage while consuming, 120 A typical. It has been designed for very wide band opera- tion. It is packaged in a 4mm x 4mm x0.9mm 20-lead MCLP package and is rated MSL3. Simplified Schematic and Pad Description Pad Function Number Description RF COM 8 RF common/ SUM port* RF1 3 RF out 1/In port 1* RF2 13 RF out 1/In port 2* Control 1 17 CMOS Control IN 1 Control 2 16 CMOS Control IN 2 VDD 20 Supply voltage 1.2,4-7,9,10-12 GND Ground 14,15,18,19 * Must be held at 0VDC. If required add DC blocking capacitors on these ports. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuits applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms) Purchasers of this part are entitled REV. OR to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/MCLStore/terms.jsp M161605 HSWA2-63DR+ RS/CP Mini-Circuits 200922 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales minicircuits.com Page 2 of 5