X-On Electronics has gained recognition as a prominent supplier of 2N6130 across the USA, India, Europe, Australia, and various other global locations. 2N6130 are a product manufactured by Misc. We provide cost-effective solutions for 2N6130, ensuring timely deliveries around the world.

2N6130 Misc

2N6130 electronic component of Misc
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See Product Specifications
Part No.2N6130
Manufacturer: Misc
Category: Unclassified
Description: 2N6130 misc
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 0.7117 ea
Line Total: USD 35.58 
Availability - 0
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 50
Multiples : 1
50 : USD 0.7117
100 : USD 0.6588

   
Manufacturer
Product Category
RoHS - XON
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Packaging
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We are delighted to provide the 2N6130 from our Misc manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6130 and other electronic components in the Misc manufacturer and beyond.

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The 2N6130 is a high-voltage N-channel MOSFET transistor. This transistor is capable of operating at a drain-source voltage as high as 350V and can withstand up to 625V at its gate-source voltage. The maximum drain current of this transistor is 14A. It is designed with a gate-source capacitance of 150pF in order to minimize switching losses. The transistor has an enhanced temperature range and is ideal for use in a variety of high-voltage and low-noise switching applications.

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