CM400DY-12NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD NF-Series Module 400 Amperes/600 Volts T MEASURED POINT C (BASEPLATE) A F F W X G2 G E2 B H E N E1 G G1 C2E1 E2 C1 Description: L Powerex IGBTMOD Modules K K K (4 PLACES) M NUTS are designed for use in switching D (3 PLACES) applications. Each module consists of two IGBT Transistors in a half- T THICK P P P bridge configuration with each tran - U WIDTH Q Q sistor having a reverse-connected super-fast recovery free-wheel S diode. All components and inter- C V LABEL connects are isolated from the heat R sinking baseplate, offering simpli- fied system assembly and thermal management. G2 Features: E2 Low Drive Power Low V C2E1 E2 C1 CE(sat) Discrete Super-Fast Recovery Free-Wheel Diode E1 Isolated Baseplate for Easy G1 Heat Sinking Applications: Outline Drawing and Circuit Diagram AC Motor Control UPS Dimensions Inches Millimeters Dimensions Inches Millimeters Battery Powered Supplies A 4.25 108.0 N 1.18 30.0 B 2.44 62.0 P 0.71 18.0 Ordering Information: C 1.18+0.04/-0.02 30.0+1.0/-0.5 Q 0.28 7.0 Example: Select the complete D 3.660.01 93.00.25 R 0.87 22.2 part module number you desire E 1.890.01 48.00.25 S 0.33 8.5 from the table below -i.e. CM400DY-12NF is a 600V (V ), CES F 0.98 25.0 T 0.02 0.5 400 Ampere Dual IGBTMOD G 0.24 6.0 U 0.110 2.8 Power Module. H 0.59 15.0 V 0.16 4.0 Type Current Rating V CES K 0.55 14.0 W 0.85 21.5 Amperes Volts (x 50) L 0.26 Dia. Dia. 6.5 X 0.94 24.0 CM 400 12 M M6 Metric M6 1Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM400DY-12NF CM400DY-12NF Dual IGBTMOD NF-Series Module Dual IGBTMOD NF-Series Module 400 Amperes/600 Volts 400 Amperes/600 Volts Absolute Maximum Ratings, T = 25 C unless otherwise specified j Ratings Symbol CM400DY-12NF Units Junction Temperature T 40 to 150 C j Storage Temperature T 40 to 125 C stg Collector-Emitter Voltage (G-E Short) V 600 Volts CES Gate-Emitter Voltage (C-E Short) V 20 Volts GES Collector Current*** (DC, T = 92C) I 400 Amperes C C Peak Collector Current I 800* Amperes CM Emitter Current** (T = 25C) I 400 Amperes C E Peak Emitter Current** I 800* Amperes EM Maximum Collector Dissipation (T = 25C, T 150C) P 1130 Watts C j C Mounting Torque, M6 Main Terminal 40 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V 2500 Volts ISO . Static Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1.0 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 0.5 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 40mA, V = 10V 5.0 6.0 7.5 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 400A, V = 15V, T = 25C 1.7 2.2 Volts CE(sat) C GE j I = 400A, V = 15V, T = 125C 1.7 Volts C GE j Total Gate Charge Q V = 300V, I = 400A, V = 15V 1600 nC G CC C GE Emitter-Collector Voltage** V I = 400A, V = 0V 2.6 Volts EC E GE Dynamic Electrical Characteristics, T = 25 C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 60 nf ies Output Capacitance C V = 10V, V = 0V 7.3 nf oes CE GE Reverse Transfer Capacitance C 2.4 nf res Inductive Turn-on Delay Time t 300 ns d(on) Load Rise Time t V = 300V, I = 400A, 200 ns r CC C Switch Turn-off Delay Time t V = V = 15V, R = 3.1, 450 ns d(off) GE1 GE2 G Time Fall Time t Inductive Load 300 ns f Diode Reverse Recovery Time** t Switching Operation, 250 ns rr Diode Reverse Recovery Charge** Q I = 400A 6.8 C rr E *Pulse width and repetition rate should be such that device junction temperature (T ) does not exceed T rating. j j(max) **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi) ***Tc measured point is just under the chips. If this vaule is used, Rth(f-a) should be measured just under the chips . 2 3