MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79 TRANSFER-MOLD TYPE INSULATED TYPE PS21A79 MAIN FUNCTION AND RATINGS z 3 phase inverter with N-side open emitter structure z 600V / 50A (CSTBT) APPLICATION z AC100 ~ 200Vrms class, motor control INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply) Temperature monitoring : Analog output of LVIC temperature Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active) UL Approved : File No. E80276 MAXIMUM RATINGS (T = 25C, unless otherwise noted) j INVERTER PART Symbol Parameter Condition Ratings Unit V Supply voltage Applied between P-NU,NV,NW 450 V CC V Supply voltage (surge) Applied between P-NU,NV,NW 500 V CC(surge) V Collector-emitter voltage 600 V CES I Each IGBT collector current T = 25C 50 A C C I Each IGBT collector current (peak) T = 25C, less than 1ms 100 A CP C P Collector dissipation T = 25C, per 1 chip 142 W C C T Junction temperature -20~+150 C j CONTROL (PROTECTION) PART Symbol Parameter Condition Ratings Unit V Control supply voltage Applied between V -V , V -V 20 V D P1 PC N1 NC V Control supply voltage Applied between V -V , V -V , V -V 20 V DB UFB UFS VFB VFS WFB WFS V Input voltage Applied between U , V , W -V , U , V , W -V -0.5~V+0.5 V IN P P P PC N N N NC D V Fault output supply voltage Applied between F -V -0.5~V+0.5 V FO O NC D I Fault output current Sink current at F terminal 1 mA FO O V Current sensing input voltage Applied between CIN-V -0.5~V+0.5 V SC NC D TOTAL SYSTEM Symbol Parameter Condition Ratings Unit Self protection supply voltage limit V = 13.5~16.5V, Inverter Part D V 400 V CC(PROT) (Short circuit protection capability) T = 125C, non-repetitive, less than 2 s j T Module case operation temperature (Note 1) -20~+100 C C T Storage temperature -40~+125 C stg 60Hz, Sinusoidal, AC 1minute, between connected all V Isolation voltage 2500 V iso rms pins and heat-sink plate Note 1: Tc measurement point is described in Fig.1. THERMAL RESISTANCE Limits Symbol Parameter Condition Unit Min. Typ. Max. R Junction to case thermal Inverter IGBT part (per 1/6 module) - - 0.88 C/W th(j-c)Q resistance (Note 2) R Inverter FWDi part (per 1/6 module) - - 1.78 C/W th(j-c)F Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100 m~+200m on the contacting surface of DIPIPM and heat-sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.2C/W (per 1/6 module, grease thickness: 20m, thermal conductivity: 1.0W/mk). March 2011 1 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A79 TRANSFER-MOLD TYPE INSULATED TYPE Fig. 1: T MEASUREMENT POINT C Measurement point for Tc ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise noted) j INVERTER PART Limits Symbol Parameter Condition Unit Min. Typ. Max. T = 25C - 1.55 2.05 Collector-emitter saturation V =V = 15V j D DB V V CE(sat) voltage V = 5V, I = 50A IN C T = 125C - 1.65 2.10 j V FWDi forward voltage -I = 50A, V = 0V - 1.70 2.20 V EC C IN t 1.80 2.40 3.60 s on t - 0.40 0.60 s C(on) V = 300V, V = V = 15V CC D DB Switching times I = 50A, T = 125C, V = 0 5 V t C j IN - 3.00 4.20 s off Inductive Load (upper-lower arm) t - 0.60 1.20 s C(off) t - 0.30 - s rr T = 25C - - 1 Collector-emitter cut-off j I V =V mA CES CE CES current T = 125C - - 10 j CONTROL (PROTECTION) PART Limits Symbol Parameter Condition Unit Min. Typ. Max. V = 15V, V = 0V - - 5.50 D IN I Circuit current Total of V -V , V -V D P1 PC N1 NC V = 15V, V = 5V - - 5.50 D IN mA V = V = 15V, V = 0V - - 0.55 V -V , V -V D DB IN UFB UFS VFB VFS, I Circuit current DB V -V WFB WFS V = V = 15V, V = 5V - - 0.55 D DB IN -20C Tj 125C, Rs= 40.2 (1%), I Short circuit trip level Not connecting outer shunt resistors to (Note 3) 85 - - A SC NU,NV,NW terminals UV Trip level 10.0 - 12.0 V DBt P-side UV Reset level 10.5 - 12.5 V DBr Control supply under-voltage T 125C j protection UV Trip level 10.3 - 12.5 V Dt N-side UV Reset level 10.8 - 13.0 V Dr V V = 0V, F terminal pull-up to 5V by 10k 4.9 - - V FOH SC O Fault output voltage V V = 1V, I = 1mA - - 0.95 V FOL SC FO t Fault output pulse width C=22nF (Note 4)1.6 2.4 - ms FO FO I Input current V = 5V 0.7 1.0 1.5 mA IN IN V ON threshold voltage 2.1 2.3 2.6 V th(on) Applied between U , V , W -V , U , V , W -V P P P PC N N N NC V OFF threshold voltage 0.8 1.4 2.1 V th(off) V Temperature output LVIC temperature = 85C (Note 5) 3.57 3.63 3.69 V OT Note 3 : Short circuit protection can work for N-side IGBTs only. Isc level can change by sense resistance. For details, please refer the application note for this DIPIPM or contact us. And in that case, it should be for sense resistor to be larger resistance than the value mentioned above. Note 4 : Fault signal is output when short circuit or N-side control supply under-voltage protective functions operate. The fault output pulse-width t depends on FO -6 the capacitance value of C . (C (typ.) = t x (9.1 x 10 ) F ) FO FO FO Note 5 : DIPIPM don t shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that user defined, controller (MCU) should stop the DIPIPM. And this output might exceed 5V when temperature rises excessively, so it is recommended for protection of control part like MCU to insert a clamp Di between supply (e.g. 5V) for control part and this output. Temperature of LVIC vs. V output OT characteristics is described in Fig.2 March 2011 2