X-On Electronics has gained recognition as a prominent supplier of 93512542S710 Silicon RF Capacitors / Thin Film across the USA, India, Europe, Australia, and various other global locations. 93512542S710 Silicon RF Capacitors / Thin Film are a product manufactured by Murata. We provide cost-effective solutions for Silicon RF Capacitors / Thin Film, ensuring timely deliveries around the world.

93512542S710 Murata

93512542S710 electronic component of Murata
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Part No.93512542S710
Manufacturer: Murata
Category: Silicon RF Capacitors / Thin Film
Description: CAP SILICON 1.0UF 15% 11V 1208
Datasheet: 93512542S710 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 16.7012 ea
Line Total: USD 16.7 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 16.7012

   
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We are delighted to provide the 93512542S710 from our Silicon RF Capacitors / Thin Film category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 93512542S710 and other electronic components in the Silicon RF Capacitors / Thin Film category and beyond.

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EXSC Embedded & Wirebond Extreme Temperature Silicon Capacitor Rev 3.6 Key features Key applications All applications up to 250C, such as Ultra High Operating temperature up to 250C downhole and defense industries Low profile (250m) High reliability applications High stability of capacitance value: Replacement of X8R and C0G dielectrics Temperature <1,5% (-55C to +250C) Decoupling / Filtering / Charge pump Voltage <0.1%/Volts (i.e.: motor management, temperature Negligible capacitance loss through ageing sensors) Downsizing Low leakage current down to 100pA High reliability Aluminum Pad finishing EXSC provide the highest capacitor stability over Thanks to the unique IPDiA Silicon capacitor technology, most of the problems encountered in the full -55C/+250C temperature range in the demanding applications can be solved. market with a TC<1,5%. Embedded EXtreme Temperature Silicon The IPDiA technology offers industry leading Capacitors are dedicated to applications where performances relative to failure rate with a reliability up to 250C is the main parameter. FIT<0,017. EXSC are the most appropriate solution for Chip This technology also offers high reliability, up to On Board, Chip On Foil, Chip On Glass, Chip On 10 times better than alternative capacitor Ceramic, flip chip and embedded applications. technologies, such as Tantalum or MLCC, and This technology features a capacitor integration eliminates cracking phenomena. capability (up to 250nF/mm ) which offers This Silicon based technology is ROHS compliant capacitance value similar to X8R dielectric, but and compatible with lead free reflow soldering with better electrical performances than C0G/NP0 process. dielectrics, up to 250C. Arial 18 Bold Rev. Commercial Leaflet EXSC Electrical specification Parameters Value Capacitance value (*) Capacitance range 390pF to 4.7F 10 15 22 33 39 47 68 (*) Capacitance tolerances 15% Contact Contact Contact Contact 390pF/0202/30V 470pF/0202/30V 680pF/0202/30V 10pF Operating temperature range -55 to 250 C IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales 935 125 72C 339 935 125 72C 347 935 125 72C 368 - 70 to 265 C Storage temperatures 1nF/0202/30V Contact Contact Contact Contact Contact Contact 0.1nF 935 125 72C 410 IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales IPDIA Sales 1,5%, from -55 to +250C Temperature coefficient 10nF/0202/30V Contact Contact 33nF/0404/30V Contact Contact Contact 30V, 11V Breakdown Voltage (BV) 1nF 935 125 72C 510 IPDIA Sales IPDIA Sales 935 125 72F 533 IPDIA Sales IPDIA Sales IPDIA Sales Capacitance variation versus 100nF/0404/11V Contact 0.1 % /V (from 0 V to RVDC) RVDC 935 125 42F 610 Contact 220nF/0505/11V Contact IPDIA Sales Contact Contact 10nF 100nF/0605/30V IPDIA Sales 935 125 42H 622 IPDIA Sales IPDIA Sales IPDIA Sales Equivalent Serial Inductor (ESL) Max 100 pH 935 125 72G 610 Equivalent Serial Resistor (ESR) Max 0.1 1F/1208/11V Contact 50G min 3V,25C Insulation resistance 935 125 42S 710 Contact 2.2F/1612/11V 3.3F/1616/11V IPDIA Sales 4.7F/2016/11V 10G min 3V,250C 0.1F 1F/1616/30V IPDIA Sales 935 125 42V 722 935 125 42Y 733 935 125 42X 747 Negligible, < 0.001% / 10000h Aging 935 125 72Y 710 FIT<0.017 parts / billions hours Reliability (*) (*) Other values on request Capacitor height Max 250m Temperature coefficient PICS vs. MLCC capacitors 20 10 Temperature coefficient PICS DC Voltage stability Temperature coefficient ESL (nH) 25C 0 PICS vs. MLPCICC Sc avpsa. cMitLoCrsC capacitors MLCC capacitors vs. PICS C0G 0 4 C0O2 GC(N0GPO(NP)vOs.) PvsIC. SP ICS -2010 X8R 20 10 1,1 PICS X7R 10 10 -20 0 1 PICS PICS C0G 0 -300 -10 0,9 C0G C0G C0G --1400 X8R X8R -20 0,8 -10 X7R X7R 0,7 --2500 -30 -20 Z5U X7R 0,6 -40 -30 --3600 0,5 -50 --4700 -40 Y5V -60 0,4 -50 -50 -80 Z5U Z5U 0,3 -50 0 50 100 150 200 -70 -60 -60 Temperature (C) 0,2 -80 Y5V -70 PICS -70 Y5V Y5V 0,1 -90 -80 -80 0 -100 -50 -50 0 0 50 50 100 100 150 150 200 200 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0 1 2 3 4 5 6 7 Temperature (TCe)mperature (C) Bias voltage (V) Capacitance (pF) Fig.1: Capacitance change versus temperature Fig.3 ESL versus capacitance value Fig.2 Capacitance change versus voltage variation compared to alternative technologies compared to alternative technologies variation compared to alternative technologies Part Number Value 935.125. B.2. S. U xx 10 15 Breakdown 22 Voltage Size Unit 33 i.e: 100nF/0404 935 125 42F 610 4 = 11V F = 0404 G = 0605 0 = 10 f 5 = 1 n 39 7= 30V H = 0505 C = 0202 1 = 0.1 p 6 = 10 n 47 I = 0302 V = 1612 2 = 1 p 7 = 0.1 68 S =1208 Y = 1616 3 = 10 p 8 = 1 V =1216 X = 2016 4 = 0.1 n 9 = 10 Termination 4 = 0.1n Pad finishing in Aluminum ( 3m thickness +/-10%). Applicable for almost all embedded applications. Parts should be glued with non conductive paste. If conductive glue is used on the backside of the silicon cap, it is strongly recommended to connect the backside and pads 3&4 to the same level (GND preferred). Pinning definition & Outline 0202 0302 0303 0404 0505 0605 1208 1612 1616 2016 Typ. pin Symbol Description 0.58 0.80 0.80 1.00 1.25 1.50 3.00 4.00 4.00 5.00 A 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 1, 2 Signal Signal Comp. 0.58 0.64 0.80 1.00 1.25 1.25 2.00 3.00 4.00 4.00 B 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 3, 4 GND Ground size c 0,15 0,15 0,15 0,15 0,15 0,15 0,15 0,15 0,15 0,15 d 0,3 0,52 0,52 0,72 0,97 1,22 2,72 3,72 3,72 4,72 e 0,3 0,36 0,58 0,72 0,97 1,22 1,72 2,72 3,72 3,72 Packaging Tape and reel, tray, waffle pack or wafer delivery. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information For more information, please visit:

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8532.25.00 45 no--Dielectric of paper or plastics Free

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