WLSC Wire-bondable vertical Low-profile Si Capacitors down to 100 m Rev 2.2 Key features Key applications Any demanding applications such as radar, wireless Ultra low profile 100 m. infrastructure communication, data broadcasting Low leakage current. Standard wire bonding approach (top & bottom gold metallization), thanks to a perfect pad flatness. High stability (temperature and voltage). Decoupling / DC noise and harmonic filtering / Matching Negligible capacitance loss through aging. networks (e.g: GaN power amplifier, LDMOS). High reliability applications. Compatible with standard wire bonding assembly (ball and wedge). Downsizing. Low profile applications (100 m). Fully compatible with single layer ceramic capacitors and (please refer to our Assembly Application Note for more details) Metal Oxide Semiconductor. The WLSC (100 m thick) capacitors target RF High Power applications for wireless communication (e.g: 5G), radar and data broadcasting systems. The WLSC capacitors are suitable for DC decoupling, matching network, and harmonic / noise filtering functions . The unique technology of integrated passive devices in silicon developed by Murata Integrated Passive Solutions, can solve most of the problems encountered in demanding applications. These Si capacitors in ultradeep trenches have been developed with a semiconductor process which enables the integration of high capacitance density from 1.55 nF/mm to 250 nF/mm (with a breakdown voltage of respectively 450 V to 11 V). Our SiCap technology features high reliability - up to 10 times better than alternative capacitors technologies - thanks to a full control of the production process with high temperature curing (above 900C) generating a highly pure oxide. This technology provides industry-leading performance particularly in terms of capacitor stability over the full operating DC voltage & temperature range. In addition, intrinsic properties of the silicon show a low dielectric absorption and a low to zero piezo electric effect resulting in no memory effect. This Silicon based technology is ROHS compliant. Ref: CLWLSC2.2 1Murata Silicon Capacitors - WLSC Series Rev 2.2 Electrical specifications Wire-Bondable vertical Low-profile Si Capacitors down to 100 m Parameter Value WLSC.xxx from -55C to 150C Capacitance range 47 pF to 22 nF(*) Part number Capacitance BV Case size Thickness Capacitance tolerances 15 % (*) 935146528247-xxT 47 pF 150 V 0201 100 m Operating temperature range -55 C to 150C (*) 935146522310-xxT 100 pF 150 V 0101 100 m Storage temperature range -70C to 165C(**) 935146521310-xxT 100 pF 150 V 0202 100 m Temperature coefficient +60 ppm/K 935146529315-xxT 150 pF 150 V 015015 100 m Breakdown Voltage (BV) 11 V, 30 V, 50 V, 100 V, 150 V, 450 V(*) 935146832410-xxT 1 nF 30 V 0101 100 m Capacitance variation versus RVDC 0.02 %/V (from 0 to RVDC) 935146632410-xxT 1 nF 50 V 0101+ 100 m Equivalent Series Inductance (ESL) Typ 50 pH SRF (***) 935146521410-xxT 1 nF 150 V 0202 100 m Equivalent Series Resistance (ESR) Max 50 m (***) 935146831510-xxT 10 nF 30 V 0202 100 m 935146630510-xxT 10 nF 50 V 0303 100 m Insulation resistance 10 G RVDC 25C t>120s for 10 nF 935146634522-xxT 22 nF 50 V 0504 100 m Aging Negligible, < 0.001 % / 1000 h Reliability FIT<0.017 parts / billions hours Capacitor thickness 100 m(*) (*) Other values on request (**) w/o packing (***) with wire-bonding de-embedded Fig. 1: Capacitance variation vs temperature Fig.2: Capacitance variation vs DC biasing voltage Fig.3: Various WLSC measurement results (for WLSC and MLCC technologies) BV30 (for WLSC and MLCC technologies) (Impedance in shunt mode) with capacitance value from 47pF to 1nF Capacitance range 0504 0402 Available parts. For other values, contact your Murata sales representative. 0303 Under development. 0302 BV 11V BV 50V 0101+ available as 1 nF-BV50 only. 0202 BV 30V BV 150V 0201 BV 100V BV 450V 015015 0101 / 0101+ 10pF 100pF 1nF 10nF 100nF Capacitance Termination Package Outline Can be directly mounted on the PCB using die Pad dimension mm Case size mm (typ 0.02 mm) bonding and wire bonding(s). Bottom electrode in a b L W T Ti/Ni/Au and top electrode in Gold (TiWAu). Other top finishings available on request (ex: Aluminum). 0101 >0.15 >0.15 0.25 0.25 Compatible with standard wire bonding assembly 0101+ >0.15 >0.15 0.294(*) 0.294(*) (ball and wedge). 015015 >0.281 >0.281 0.381 0.381 0201 >0.40 >0.15 0.50 0.25 0202 >0.40 >0.40 0.50 0.50 0.10 0302 >0.7 >0.4 0.8 0.5 (*) Only for 1nF / BV50 case size = 0.294x0.294mm 0303 >0.70 >0.70 0.80 0.80 0402 >0.9 >0.4 1.00 0.50 0504 >1.15 >0.9 1.25 1.00 Ref: CLWLSC2.2 2 47pF 150pF 330pF 470pF 1.5nF 2.2nF 2.7nF 4.7nF 5.6nF 6.8nF 15nF 22nF 33nF 47nF 56nF 68nF 100nF