XBSC / UBSC / BBSC / ULSC - 100+/60+/40/20 GHz Ultra Broadband Surface Mounted Silicon Capacitors Rev 1.3 Key features Key applications Ultra broadband performance up to 110 GHz Optoelectronics/high-speed data Resonance free allowing ultra low group delay Trans-Impedance Amplifiers (TIA) variation Receive-and-Transmit Optical Sub-Assembly (ROSA/ Ultra low insertion loss thanks to an excellent TOSA) impedance matching in transmission mode Synchronous Optical Networking (SONET) Low ESL and low ESR in bypass grounding mode High speed digital logic High stability of capacitance value over temperature, Broadband test equipment voltage and aging Broadband microwave/millimeter wave High reliability Replacement of X7R and NP0 capacitors Compatible with lead free reflow soldering Low profile applications (400 or 100 m) (please refer to our Assembly Application Note for more details) The XBSC/UBSC/BBSC/ULSC Capacitors target optical communication systems (ROSA/TOSA,SONET and all optoelectronics) as well as high speed data systems or products. These capacitors are designed for DC blocking, coupling and bypass grounding applications. The unique technology of integrated passive devices in silicon developed by Murata Integrated Passive Solutions offers low insertion loss, low reflection and high phase stability from 16 kHz*, up to 110 GHz for the XBSC, up to 67 GHz for the UBSC, up to 40 GHz for the BBSC and up to 20 GHz for the ULSC. These deep trench silicon capacitors have been developed with a semiconductor MOS process. They provide very high reliability and capacitance stability over voltage (0.1%/V) and temperature (60 ppm/K). They have an extended operating temperature range from -55 to 150C. Reliable and repeatable performances are obtained thanks to a fully controlled production line with high temperature curing (above 900C) generating a highly pure oxide. The XBSC/UBSC/BBSC/ULSC series are compliant with standard JEDEC assembly rules, making the product fully compatible with high speed automated pick-and-place manufacturing operations. These capacitors are RoHS-compliant and are available either with ENIG terminations or lead-free prebumping depending on the case size. *Cut off frequency at 3dB based on 100nF capacitance value Ref: CLUBSC1.3 1 cc14 3 Murata Silicon Capacitors - XBSC Series Rev 1.3 XBSC 100 GHz+ electrical specifications Part number Product description Case size Thickness Parameter Value Capacitance range 5.6 nF to 10 nF(*) Surface Mount Xtrem Broadband Si Cap XBSC.xxx from -55 to 150C, 100 GHz+ with Capacitance tolerance 15 %(*) SAC305 pre-bump Operating temperature range -55 C to 150 C Xtrem Broadband Si Cap 10 nF 100 939118492510-xxS 0201M 100 m GHz+ BV>11 Storage temperature - 70 C to 165 C(**) Temperature coefficient +60 ppm/K Xtrem Broadband Si Cap 5.6 nF 100 93 9118722456-xxS 0201M 100 m GHz+ BV>30 Breakdown voltage (BV) 11 VDC or 30 VDC Capacitance variation versus RVDC 0.1 %/V (from 0 V to RVDC) Insertion loss (IL) up to 60 GHz+ <1.2 dB(***) Return Loss (RL) up to 60 GHz+ >20 dB(***) Equivalent Series Inductance (ESL) Typ. 100 pH(***) SRF Equivalent Series Resistance (ESR) Typ. 300 m (***) 10 G RVDC, 25C, t>120s, Insulation resistance for 10nF Ageing Negligible, < 0.001% / 1000 h Reliability FIT<0.017 parts / billion hours Capacitor height 100 m (*) Other values on request (**) w/o packing (***) e.g. 10nF/0201M/BV 11V n n e c cn 5oe y yn 5%e r G Gn e 5-e 8 yc H Hn ) cc 56e z zn eo%-6 ve nynHn6n n cnn r r r 0 G 14 3 Fig. 1: Capacitance variation vs temperature Fig.2: Capacitance variation vs DC biasing voltage Fig.3: 10 nF/0201M XBSC BV11 (for XBSC and MLCC technologies) BV 30 (for XBSC and MLCC technologies) measurement results (S-parameters in transmission mode) FREE S-Parameters-Based Linear Simulation Models for ADS: