CHIP MONOLITHIC CERAMIC CAPACITOR FOR GENERAL GRM188F11H473ZA01 (0603, F, 47000pF, 50Vdc) : packaging code Reference Sheet 1.Scope This product specification is applied to Chip Monolithic Ceramic Capacitor used for General Electronic equipment. 2.MURATA Part NO. System (Ex.) GRM 18 8 F1 1H 473 Z A01 D (1)L/W (2)T (3)Temperature (4)DC Rated (5)Nominal (6)Capacitance (7)Muratas (8)Packaging Dimensions Characteristics Voltage Capacitance Tolerance Control Code Code Dimensions 3. Type & Dimensions L W T e g e (Unit:mm) (1)-1 L (1)-2 W (2) T e g 1.60.1 0.80.1 0.80.1 0.2 to 0.5 0.5 min. 4.Rated value (3) Temperature Characteristics Specifications and Test (4) (6) (Public STD Code):F(JIS) (5) Nominal Methods DC Rated Capacitance (Operationg Temp. coeff Temp. Range Capacitance Voltage Tolerance Temp. Range) orCap. Change (Ref.Temp.) -25 to 85 C 50 Vdc 47000 pF +80/-20 % -80 to 30 % -25 to 85 C (20 C) 5.Package mark (8) Packaging Packaging Unit f180mm Reel D 4000 pcs./Reel PAPER W8P4 f330mm Reel J 10000 pcs./Reel PAPER W8P4 Product specifications in this catalog are as of Jan.26,2013,and are subject to change or obsolescence without notice. Please consult the approval sheet before ordering. Please read rating and Cautions first. GRM188F11H473ZA01-01 1SPECIFICATIONS AND TEST METHODS Specification No Item Test Method Temperature High Dielectric Compensating Type Constant Type 1 Operating C,1X55 to 125 B1,B3,F125 to 85 Standard Temperature20 Temperature Range 0C55 to 150 R1,R7,C755 to 125 (R6,R7,R9,C7,C8,F5,L825 Other 25 to 85 R655 to 85 R9,L855 to 150 C855 to 105 F530 to 85 2 Rated Voltage See the previous pages. The rated voltage is defined as the maximum voltage which may be applied continuously to the capacitor. P-P O-P When AC voltage is superimposed on DC voltage, V or V , whichever is larger, should be maintained within the rated voltage range. 3 Appearance No defects or abnormalities. Visual inspection. 4 Dimension Within the specified dimensions. Using calipers. (GRM02 size is based on Microscope) 5 Dielectric Strength No defects or abnormalities. No failure should be observed when 300% of the rated voltage (temperature compensating type) or 250% of the rated voltage (high dielectric constant type) is applied between the terminations for 1 to 5 seconds, provided the charge/discharge current is less than 50mA. 6 Insulation C0.047 F:More than 10000M The insulation resistance should be measured with a DC voltage Resistance C0.047 F:More than 500F not exceeding the rated voltage at 20 /25 and 75%RH max. C:Nominal Capacitance and within 2 minutes of charging, provided the charge/discharge current is less than 50mA. 7 Capacitance Within the specified tolerance. The capacitance/D.F. should be measured at 20/25 at the frequency and voltage shown in the table. 8 Q/Dissipation 30pF and over:Q 1000 B1,B3,R1,R6,R7,C7,C8,L8 Factor (D.F.) 30pF and below:Q 400+20C (1)Temperature Compensating Type W.V.:100V :0.025max.(C 0.068 mF) :0.05max.(C 0.068 mF) Capacitance Frequency Voltage C:Nominal Capacitance(pF) W.V.:50V/25V :0.025max. C1000pF 10.1MHz 0.5 to 5Vrms W.V.:16V/10V :0.035max. C1000pF 10.1kHz 10.2Vrms W.V.:6.3V/4V :0.05max.(C 3.3 mF) :0.1max.(C3.3 mF) R9 (2)High Dielectric Constant Type W.V.:50V: 0.05max. F1,F5 Capacitance Frequency Voltage W.V.:25Vmin C10F 10.1kHz 10.2Vrms :0.05max. (C 0.1 mF) C10F 12024Hz 0.50.1Vrms :0.09max.(C 0.1 mF) W.V.:16V/10V:0.125max. W.V.:6.3V:0.15max. Capacitance B1,B3 : Within 10% 9 No bias Within the specified The capacitance change should be measured after 5min. at each Temperature tolerance.(Table A) (-25C to +85C) specified temp.stage. Characteristics R1,R7 : Within 15% (1)Temperature Compensating Type (-55C to +125C) The temperature coefficient is determind using the capacitance R6 : Within 15% measured in step 3 as a reference. (-55C to +85C) When cycling the temperature sequentially from step 1 through R9 : Within 15% 5 ( C+20 to +125other temp.coeffs.:+20 to +85) the (-55C to +150C) capacitance should be within the specified tolerance for the C7 : Within 22% temperature coefficient and capacitance change as Table A-1. (-55C to +125C) The capacitance drift is caluculated by dividing the differences C8 : Within 22% between the maximum and minimum measured values in the (-55C to +105C) step 1,3 and 5 by the cap.value in step 3. F1 : Within +30/-80% Step Temperature(C) (-25C to +85C) 1 202 F5 :Within +22/-82% 2 -55 3(for C)/-253(for other TC) (-30C to +85C) 3 202 L8 : Within 15% 125 3(for 2C/3C/4C) (-55C to +125C) 4 150 3(for 0C) : Within +15/-40% 853(for other TC) (+125C to +150C) 5 202 50% of B1: Within +10/-30% R1: Within +15/-40% the rated 2) High Dielectric Constant Type voltage F1: Within +30/-95% The ranges of capacitance change compared with the 20 value over the temperature ranges shown in the table should be CapacitanceWithin0.2% or0.05pF within the specified ranges.* Drift (Whichever is larger.) In case of applying voltage, the capacitance change should be *Not apply to 1X/25V measured after 1 more min. with applying voltage in equilibration of each temp. stage. Applying Step Temperature() voltage 1 202/252 *Initial measurement for high -553(for R1,R7,R6,R9,C7,C8,L8)/ dielectric constant type 2 -253(for B1,B3,F1)/ -303(for F5) No bias Perform a heat treatment at 150 3 202/252 +0/-10 for one hour and then 1253(for R1,R7,C7)/1503(for R9,L8) set for 242 hours at room 4 1053(for C8)/853(for B1,B3,R6,F1,F5) temperature. 5 202 Perform the initial measure-ment. 6 -553(for R1)/-253(for B1,F1) 50% of the 7 202 rated voltage 8 1253(for R1)/853(for B1,F1) JEMCGS-0001S 2