X-On Electronics has gained recognition as a prominent supplier of NCE30TD60BF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. NCE30TD60BF IGBT Transistors are a product manufactured by NCE Power. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

NCE30TD60BF NCE Power

Name: NCE30TD60BF
Brand: NCE Power
SKU: NCE30TD60BF_NCE Power
Availability: OutOfStock
Rating: 5 (11 reviews)

NCE30TD60BF electronic component of NCE Power

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Part No.	NCE30TD60BF
Manufacturer:	NCE Power
Category:	IGBT Transistors
Description:	35.5W 60A 600V Trench TO-220F-3 IGBTs ROHS
Datasheet:	NCE30TD60BF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.5661 ea
Line Total: USD 1.57

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

NCE30TD60BF More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 14 Feb to Wed. 19 Feb MOQ : 1 Multiples : 1	1 : USD 1.5661 10 : USD 1.3402 50 : USD 1.2176 100 : USD 1.076 500 : USD 1.0147 1000 : USD 0.9861

Specifications

Manufacturer NCE Power NCE Power
Product Category IGBT Transistors IGBT Transistors
Category IGBT Transistors IGBT Transistors
Rohs y y
Package TO - 220F TO - 220F
Brand Category Nce Power Nce Power
Turn Off Delay Time Tdoff 166ns 166ns
Power Dissipation Pd 35.5 W 35.5 W
Operating Temperature - 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)
Turn On Delay Time Tdon 19ns 19ns
Collector Current Ic 60 A 60 A
Collector-Emitter Breakdown Voltage Vces 600 V 600 V
Type Trench Trench
Gate-Emitter Threshold Voltage Vgeth@Ic 5 V @1 mA 5 V @1 mA
Total Gate Charge Qg@Ic Vge 132 nC @30A , 15V 132 nC @30A , 15V
Collector-Emitter Saturation Voltage Vcesat@Ic Vge 1.7 V @30A , 15 V 1.7 V @30A , 15 V
Diode Reverse Recovery Time Trr 178ns 178ns
Turn Off Switching Loss Eoff 0.32mJ 0.32mJ
Turn On Switching Loss Eon 0.36mJ 0.36mJ
Collector Cut-Off Current Ices@Vce 4 uA @600V 4 uA @600V
Input Capacitance Cies@Vce 3.552 nF @25V 3.552 nF @25V
Diode Forward Voltage Vf@If 1.7 V @30A 1.7 V @30A
Pulsed Collector Current Icm 90 A 90 A

We are delighted to provide the NCE30TD60BF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NCE30TD60BF and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

The NCE30TD60BF is a TO-220F-3 Insulated-Gate Bipolar Transistor (IGBT) with a rated power of 35.5 watts and a maximum current of 60A at a peak voltage of 600V. It is manufactured by NCE Power and is RoHS compliant, meaning that it meets the requirements of the Restriction of Hazardous Substances Directive. It is suitable for use in power converters, motor controls, switching power supplies, welding and other high-power switching applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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