Product Information

NCE30TD60BF

NCE30TD60BF electronic component of NCE Power

Datasheet
35.5W 60A 600V Trench TO-220F-3 IGBTs ROHS

Manufacturer: NCE Power
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7028 ea
Line Total: USD 1.7

970 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
846 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

NCE30TD60BF
NCE Power

1 : USD 1.6478
10 : USD 1.4101
50 : USD 1.2812
100 : USD 1.1321
500 : USD 1.0676
1000 : USD 1.0375

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Turn Off Delay Time Tdoff
Power Dissipation Pd
Operating Temperature
Turn On Delay Time Tdon
Collector Current Ic
Collector-Emitter Breakdown Voltage Vces
Type
Gate-Emitter Threshold Voltage Vgeth@Ic
Total Gate Charge Qg@Ic Vge
Collector-Emitter Saturation Voltage Vcesat@Ic Vge
Diode Reverse Recovery Time Trr
Turn Off Switching Loss Eoff
Turn On Switching Loss Eon
Collector Cut-Off Current Ices@Vce
Input Capacitance Cies@Vce
Diode Forward Voltage Vf@If
Pulsed Collector Current Icm
LoadingGif

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The NCE30TD60BF is a TO-220F-3 Insulated-Gate Bipolar Transistor (IGBT) with a rated power of 35.5 watts and a maximum current of 60A at a peak voltage of 600V. It is manufactured by NCE Power and is RoHS compliant, meaning that it meets the requirements of the Restriction of Hazardous Substances Directive. It is suitable for use in power converters, motor controls, switching power supplies, welding and other high-power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Wuxi NCE Power Semiconductor

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