BAS16LSYL Nexperia

BAS16LS High-speed switching diode 9 February 2021 Product data sheet 1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits High switching speed: t 4 ns rr Low leakage current Repetitive peak reverse voltage V 100 V RRM Suitable for Automatic Optical Inspection (AOI) of solder joint Low capacitance Reverse voltage V 100 V R Ultra small and leadless SMD plastic package 3. Applications High-speed switching General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I forward current T = 25 C 1 - - 215 mA F j I reverse current V = 80 V T = 25 C - - 0.5 A R R j V reverse voltage T = 25 C - - 100 V R j t reverse recovery time I = 10 mA I = 10 mA R = 100 - - 4 ns rr F R L I = 1 mA T = 25 C R(meas) amb 1 Device mounted on an FR4 Printed-Circuit Board (PCB), 70 m single-sided copper, tin-plated and standard footprint.Nexperia BAS16LS High-speed switching diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode K A 1 2 2 A anode aaa-028035 Transparent top view DFN1006BD-2 (SOD882BD) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS16LS DFN1006BD-2 Leadless ultra small plastic package with side-wettable flanks SOD882BD (SWF) 2 terminals 0.65 mm pitch 1 mm x 0.6 mm x 0.47 mm body 7. Marking Table 4. Marking codes Type number Marking code M8 BAS16LS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse T = 25 C - 100 V RRM j voltage V reverse voltage - 100 V R I forward current 1 - 215 mA F I non-repetitive peak t = 1 s square wave T = 25 C - 4 A FSM p j(init) forward current t = 1 ms square wave T = 25 C - 1 A p j(init) t = 1 s square wave T = 25 C - 0.5 A p j(init) I repetitive peak forward t 0.5 ms 0.25 - 500 mA FRM p current P total power dissipation T 25 C 1 - 345 mW tot amb 2 - 645 mW T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), 70 m single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 Printed-Circuit Board (PCB), 70 m single-sided copper, tin-plated mounting pad for cathode 1cm . BAS16LS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 9 February 2021 2 / 11