BAS21LSYL Nexperia

BAS21LS High-speed switching diode 7 October 2021 Product data sheet 1. General description High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits High switching speed: t 50 ns rr Low leakage current High reverse voltage V 200 V R Low capacitance: C 2 pF d Ultra small and leadless SMD plastic package Suitable for Automatic Optical Inspection (AOI) of solder joint 3. Applications High-speed switching General-purpose switching Voltage clamping Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I forward current T = 25 C 1 - - 250 mA F j V reverse voltage - - 200 V R V repetitive peak reverse - - 250 V RRM voltage I reverse current V = 200 V T = 25 C - - 100 nA R R j t reverse recovery time I = 30 mA I = 30 mA R = 100 - - 50 ns rr F R L I = 3 mA T = 25 C R(meas) amb 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 70 m copper, tin-plated and standard footprint.Nexperia BAS21LS High-speed switching diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 2 2 A anode K A Transparent aaa-028035 top view DFN1006BD-2 (SOD882BD) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS21LS DFN1006BD-2 Leadless ultra small plastic package with side-wettable SOD882BD flanks (SWF) 2 terminals 0.65 mm pitch 1 mm x 0.6 mm x 0.47 mm body 7. Marking Table 4. Marking codes Type number Marking code M9 BAS21LS 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse T = 25 C - 250 V RRM j voltage V reverse voltage - 200 V R I forward current 1 - 250 mA F I non-repetitive peak t = 50 s square wave T = 25 C - 9.5 A FSM p j(init) forward current t = 10 ms square wave T = 25 C - 2.1 A p j(init) I repetitive peak forward t 1 ms 0.25 - 1 A FRM p current P total power dissipation T 25 C 1 - 335 mW tot amb 2 - 610 mW T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 70 m copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 70 m copper, tin-plated mounting pad for cathode 1cm . BAS21LS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2021. All rights reserved Product data sheet 7 October 2021 2 / 10