BAS21PG Nexperia

BAS21PG Dual isolated high-voltage switching diode 9 June 2015 Product data sheet 1. General description Dual high-voltage switching diode encapsulated in a very small SOT353 (SC-88A) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: t 50 ns rr Low leakage current Reverse voltage V 250 V R Low capacitance: C 2 pF d Very small SMD plastic package AEC-Q101 qualified 3. Applications High-speed switching at high voltage High-voltage general-purpose switching Voltage clamping Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode I forward current T = 25 C single diode loaded - - 225 mA F j V reverse voltage T = 25 C - - 250 V R j Per diode I reverse current V = 200 V T = 25 C - 25 100 nA R R j t reverse recovery time I = 10 mA I = 10 mA I = 1 mA - - 50 ns rr F R R(meas) R = 100 T = 25 C L j Scan or click this QR code to view the latest information for this product SOT353NXP Semiconductors BAS21PG Dual isolated high-voltage switching diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode diode 1 5 4 5 4 2 n.c. not connected 3 A2 anode diode 2 1 2 3 4 K2 cathode diode 2 TSSOP5 (SOT353) 1 2 3 5 K1 cathode diode 1 aaa-018440 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS21PG TSSOP5 plastic surface-mounted package 5 leads SOT353 7. Marking Table 4. Marking codes Type number Marking code BAS21PG PG BAS21PG All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 9 June 2015 2 / 13