BAV170VL Nexperia

BAV170VL electronic component of Nexperia
BAV170VL Nexperia
BAV170VL Small Signal Switching Diodes
BAV170VL  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BAV170VL Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. BAV170VL Small Signal Switching Diodes are a product manufactured by Nexperia. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

Part No. BAV170VL
Manufacturer: Nexperia
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes BAV170/SOT23/TO-236AB
Datasheet: BAV170VL Datasheet (PDF)
Price (USD)
1: USD 0.1588 ea
Line Total: USD 0.16 
Availability : 13668
  
Ship by Tue. 12 Aug to Thu. 14 Aug
QtyUnit Price
1$ 0.1588
10$ 0.085
100$ 0.0787
500$ 0.0471
1000$ 0.0357
5000$ 0.0275
10000$ 0.0198
20000$ 0.0187

Availability 13668
Ship by Tue. 12 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1588
10$ 0.085
100$ 0.0787
500$ 0.0471
1000$ 0.0357
5000$ 0.0275
10000$ 0.0198
20000$ 0.0187

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAV170VL from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV170VL and other electronic components in the Small Signal Switching Diodes category and beyond.

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BAV170 Low-leakage double diode 2 October 2020 Product data sheet 1. General description Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common cathode configuration. 2. Features and benefits Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. AEC-Q101 qualified 3. Applications Low-leakage current applications in surface mounted circuits. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode V reverse voltage T = 25 C - - 75 V R j I reverse current V = 75 V pulsed T = 25 C - 0.003 5 nA R R j 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 A1 anode (diode 1) CC 2 A2 anode (diode 2) 3 CC common cathode 1 2 A1 A2 SOT23 aaa-032141Nexperia BAV170 Low-leakage double diode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BAV170 SOT23 plastic, surface-mounted package 3 terminals 1.9 mm pitch 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 JX% BAV170 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode V reverse voltage T = 25 C - 75 V R j V repetitive peak reverse - 85 V RRM voltage I forward current T = 25 C single diode loaded 1 - 215 mA F amb T = 25 C double diode loaded 1 - 125 mA amb I repetitive peak forward T = 25 C - 500 mA FRM j current I non-repetitive peak t = 1 s square wave T = 25 C - 4 A FSM p j(init) forward current t = 1 ms square wave T = 25 C - 1 A p j(init) t = 1 s square wave T = 25 C - 0.5 A p j(init) P total power dissipation T 25 C 1 - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAV170 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 2 October 2020 2 / 10

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
NEXPERIA USA INC
Nexperia USA Inc.
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