BC68PAS Nexperia

BC68PAS series 1 ) 20 V, 2 A NPN medium power transistors Rev. 1 19 June 2015 Product data sheet 1. Product profile 1.1 General description NPN medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. PNP complement: BC69PAS series 1.2 Features and benefits High collector current capability Two current gain selections I and I C CM Reduced Printed-Circuit Board (PCB) Leadless very small SMD plastic area requirements package with medium power capability Exposed heat sink for excellent thermal Suitable for Automatic Optical and electrical conductivity Inspection (AOI) of solder joint AEC-Q101 qualified 1.3 Applications Linear voltage regulators Low-side switches Battery driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 1. Quick reference data T = 25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 2 A C I peak collector current single pulse t 1ms --3 A CM p 1 h DC current gain V =1V I =500 mA 85 - 375 FE CE C 1 h selection -25 V =1V I =500 mA 160 - 375 FE CE C 1 Pulse test: t 300 s 0.02. pBC68PAS series NXP Semiconductors 20 V, 2 A NPN medium power transistors 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 3 2emitter 3 collector 1 2 sym021 UDQVSDUHQW WRS YLHZ 7 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BC68PAS DFN2020D-3 plastic thermal enhanced ultra thin small outline SOT1061D package no leads 3 terminals body BC68-25PAS 2 2 0.65 mm. 4. Marking Table 4. Marking codes Type number Marking code BC68PAS BY BC68-25PAS BZ 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 32 V CBO V collector-emitter voltage open base - 20 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 2 A C I peak collector current single pulse -3 A CM t 1ms p I base current - 0.4 A B BC68PAS SER All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 1 19 June 2015 2 of 13