BC846BPN Nexperia

BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor Rev. 01 17 July 2009 Product data sheet 1. Product prole 1.1 General description NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NPN/NPN PNP/PNP complement complement NXP JEITA BC846BPN SOT363 SC-88 BC846BS BC856BS 1.2 Features n Low collector capacitance n Low collector-emitter saturation voltage n Closely matched current gain n Reduces number of components and board space n No mutual interference between the transistors n AEC-Q101 qualied 1.3 Applications n General-purpose switching and amplication 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter voltage open base - - 65 V CEO I collector current - - 100 mA C TR1 (NPN) h DC current gain V =5V I = 2 mA 200 300 450 FE CE C TR2 (PNP) h DC current gain V = - 5V 200 290 450 FE CE I = - 2mA CBC846BPN NXP Semiconductors 65 V, 100 mA NPN/PNP general-purpose transistor 2. Pinning information Table 3. Pinning Pin Description Simplied outline Graphic symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 TR1 4 emitter TR2 132 5 base TR2 1 2 3 6 collector TR1 sym019 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BC846BPN SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 5. Marking codes 1 Type number Marking code BC846BPN PJ* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BC846BPN 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 17 July 2009 2 of 15