BCW70 Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET BCW69 BCW70 PNP general purpose transistors Product data sheet 2004 Feb 06 Supersedes data of 1999 Apr 19NXP Semiconductors Product data sheet PNP general purpose transistors BCW69 BCW70 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. handbook, halfpage 3 NPN complements: BCW71 and BCW72. 3 MARKING 1 (1) TYPE NUMBER MARKING CODE 2 BCW69 H1* 1 2 BCW70 H2* Top view MAM256 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BCW69 plastic surface mounted package 3 leads SOT23 BCW70 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 50 V CBO V collector-emitter voltage open base I = 2 mA 45 V CEO C V emitter-base voltage open collector 5 V EBO I collector current (DC) 100 mA C I peak collector current 200 mA CM I peak base current 200 mA BM P total power dissipation T 25 C 250 mW tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb 2004 Feb 06 2