X-On Electronics has gained recognition as a prominent supplier of BF821 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BF821 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BF821 Nexperia

Name: BF821
Brand: Nexperia
SKU: BF821_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	BF821
Manufacturer:	Nexperia
Category:	Bipolar Transistors - BJT
Description:	TRANSISTOR, PNP, SOT-23
Datasheet:	BF821 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

500: USD 0.0977 ea
Line Total: USD 48.85

Availability - 0

MOQ: 500 Multiples: 1
Pack Size: 1

BF821 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 28 Jan to Mon. 03 Feb MOQ : 500 Multiples : 1	500 : USD 0.0977 1500 : USD 0.0924

Specifications

Manufacturer Nexperia Nexperia
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Transistor Polarity Pnp Pnp
Packaging Cut Tape Cut Tape
Collector Emitter Voltage Vbrceo - 300 V - 300 V
Transition Frequency Ft - -
Power Dissipation Pd 250 mW 250 mW
Dc Collector Current - 50 mA - 50 mA
Dc Current Gain Hfe 50 50
Transistor Case Style Sot - 23 Sot - 23
No Of Pins 3 3
Operating Temperature Max 150 C 150 C
Msl Msl 1 - Unlimited Msl 1 - Unlimited
Svhc No Svhc (15 - Jun - 2015) No Svhc (15 - Jun - 2015)
Collector Emitter Saturation Voltage Vceon - 800 mV - 800 mV
Continuous Collector Current Ic Max - 50 mA - 50 mA
Current Ic Continuous A Max - 50 mA - 50 mA
Current Ic Hfe - 25 mA - 25 mA
Full Power Rating Temperature 25 C 25 C
Gain Bandwidth Ft Min 60Mhz 60Mhz
Gain Bandwidth Ft Typ 60Mhz 60Mhz
Hfe Min 50 50
No Of Transistors 1 1
Operating Temperature Min - 65 C - 65 C
Operating Temperature Range - 65 C To + 150 C - 65 C To + 150 C
Power Dissipation Ptot Max 250 mW 250 mW
Smd Marking 1W 1W
Termination Type Smd Smd
Voltage Vcbo - 300 V - 300 V

We are delighted to provide the BF821 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF821 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BF821 BF823 PNP high-voltage transistors Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheet PNP high-voltage transistors BF821 BF823 FEATURES PINNING Low current (max. 50 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony and professional communication equipment. DESCRIPTION PNP transistor in a SOT23 plastic package. handbook, halfpage 3 NPN complements: BF820, BF822. 3 MARKING 1 (1) TYPE NUMBER MARKING CODE 2 1 2 BF821 1W* BF823 1Y* Top view MAM256 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPENUMBER NAME DESCRIPTION VERSION BF821 plastic surface mounted package 3 leads SOT23 BF823 plastic surface mounted package 3 leads SOT23 2004 Jan 16 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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