BSH205G2 Nexperia

BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Low on-state resistance Trench MOSFET technology Enhanced power dissipation capability of 890 mW AEC-Q101 qualified 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -2.3 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -2 A T = 25 C - 120 170 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product SOT23NXP Semiconductors BSH205G2 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source G 3 D drain S 017aaa257 1 2 TO-236AB (SOT23) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BSH205G2 TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 BSH205G2 %KB 1 % = placeholder for manufacturing site code BSH205G2 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 29 April 2015 2 / 16