X-On Electronics has gained recognition as a prominent supplier of BST82,215 MOSFET across the USA, India, Europe, Australia, and various other global locations. BST82,215 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

BST82,215 Nexperia

BST82,215 electronic component of Nexperia
Images are for reference only
See Product Specifications
Part No.BST82,215
Manufacturer: Nexperia
Category: MOSFET
Description: 100V 190mA 10O@150mA,5V 830mW null SOT-23 MOSFETs ROHS
A low voltage logic P-channel MOSFET transistor used to enable and disable power.
Datasheet: BST82,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2642 ea
Line Total: USD 0.26

Availability - 77104
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.084
6000 : USD 0.084
9000 : USD 0.084
15000 : USD 0.084
30000 : USD 0.084

2975
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 5
Multiples : 5
5 : USD 0.1831
50 : USD 0.1455
150 : USD 0.1294
500 : USD 0.1094
3000 : USD 0.1004
6000 : USD 0.095

77104
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 0.2642
10 : USD 0.1917
100 : USD 0.1249
1000 : USD 0.0992
3000 : USD 0.0881
9000 : USD 0.0836
99000 : USD 0.0803

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
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We are delighted to provide the BST82,215 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BST82,215 and other electronic components in the MOSFET category and beyond.

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Nexperia's BST82,215 part is a dual NPN epitaxial silicon transistor designed for use in the Switching and Amplifier applications. It has a PNP complement and is housed in the TO-126 plastic package. The device offers high DC current gain, low saturation voltage, and requires low operating currents. It is provided with two independent current gain circuits, providing a high degree of temperature stability. This makes it an excellent choice for applications such as audio power amplifiers, power drivers, and linear amplifiers.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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