X-On Electronics has gained recognition as a prominent supplier of BST82,215 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BST82,215 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BST82,215 Nexperia

BST82,215 electronic component of Nexperia
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Part No.BST82,215
Manufacturer: Nexperia
Category: MOSFETs
Description: 100V 190mA 10O@150mA,5V 830mW null SOT-23 MOSFETs ROHS
A low voltage logic P-channel MOSFET transistor used to enable and disable power.
Datasheet: BST82,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1947 ea
Line Total: USD 0.19 
Availability - 70607
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
46560
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0892
6000 : USD 0.0876
9000 : USD 0.0867
12000 : USD 0.0862
15000 : USD 0.0841

8815
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 5
Multiples : 5
5 : USD 0.1836
50 : USD 0.1463
150 : USD 0.1303
500 : USD 0.1104
3000 : USD 0.1014
6000 : USD 0.0961

70607
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1947
10 : USD 0.1507
100 : USD 0.0979
1000 : USD 0.0957
3000 : USD 0.0869
9000 : USD 0.0825
24000 : USD 0.0814
45000 : USD 0.0792
99000 : USD 0.0759

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BST82,215 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BST82,215 and other electronic components in the MOSFETs category and beyond.

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Nexperia's BST82,215 part is a dual NPN epitaxial silicon transistor designed for use in the Switching and Amplifier applications. It has a PNP complement and is housed in the TO-126 plastic package. The device offers high DC current gain, low saturation voltage, and requires low operating currents. It is provided with two independent current gain circuits, providing a high degree of temperature stability. This makes it an excellent choice for applications such as audio power amplifiers, power drivers, and linear amplifiers.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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