X-On Electronics has gained recognition as a prominent supplier of BUK7Y53-100B,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BUK7Y53-100B,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BUK7Y53-100B,115 Nexperia

BUK7Y53-100B,115 electronic component of Nexperia
BUK7Y53-100B,115 Nexperia
BUK7Y53-100B,115 MOSFETs
BUK7Y53-100B,115  Semiconductors

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Part No. BUK7Y53-100B,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-CH TRENCHMOS STD LVL FET
Datasheet: BUK7Y53-100B,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.4375 ea
Line Total: USD 1.44 
Availability - 1373
Ship by Mon. 10 Mar to Wed. 12 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1373
Ship by Mon. 10 Mar to Wed. 12 Mar
MOQ : 1
Multiples : 1
1 : USD 1.4375
10 : USD 0.8928
100 : USD 0.5764
500 : USD 0.4642
1000 : USD 0.4631
1500 : USD 0.4125
3000 : USD 0.3586
9000 : USD 0.3553

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Package Case
Brand
Id Continuous Drain Current
Rds On Drain Source Resistance
Factory Pack Quantity :
Vds Drain Source Breakdown Voltage
Rohs Mouser
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BUK7Y53-100B,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK7Y53-100B,115 and other electronic components in the MOSFETs category and beyond.

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BUK7Y53-100B N-channel TrenchMOS standard level FET Rev. 3 13 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard level gate drive sources 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Solenoid drivers DC-to-DC converters Transmission control Engine management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source T 25 C T 175 C - - 100 V V DS j j voltage I drain current V =10V T =25C --24.8A D GS mb see Figure 1 see Figure 4 P total power T = 25 C see Figure 2 --85 W tot mb dissipation Static characteristics drain-source V =10V I =10A - 4053m R DSon GS D on-state T =25C see Figure 12 j resistance see Figure 13BUK7Y53-100B Nexperia N-channel TrenchMOS standard level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =24.8 A V 100 V --81 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =10A V =80V -8.5 -nC GD D DS V = 10 V see Figure 14 GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1c source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7Y53-100B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK7Y53-100B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 13 October 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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