BZB784-C4V7,115 Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BZB784 series Voltage regulator double diodes Product specication 2001 Feb 27 Supersedes data of 2000 May 24Philips Semiconductors Product specication Voltage regulator double diodes BZB784 series FEATURES PINNING SOT323 (SC-70) Total power dissipation: max. 350 mW PIN DESCRIPTION Approx. 5% V tolerance Z 1 cathode Working voltage range: nom. 2.4 to 15 V (E24 range). 2 cathode 3 common anode APPLICATIONS General regulation functions handbook, halfpage 3 ESD and surge protection. 3 DESCRIPTION 1 2 Low-power voltage regulator diodes in a small SOT323 (SC-70) package. 1 2 MAM407 Top view Fig.1 Simplified outline and symbol. MARKING TYPE MARKING TYPE MARKING TYPE MARKING TYPE MARKING NUMBER CODE NUMBER CODE NUMBER CODE NUMBER CODE BZB784-C2V4 91 BZB784-C3V9 96 BZB784-C6V2 9B BZB784-C10 9G BZB784-C2V7 92 BZB784-C4V3 97 BZB784-C6V8 9C BZB784-C11 9H BZB784-C3V0 93 BZB784-C4V7 98 BZB784-C7V5 9D BZB784-C12 9J BZB784-C3V3 94 BZB784-C5V1 99 BZB784-C8V2 9E BZB784-C13 9K BZB784-C3V6 95 BZB784-C5V6 9A BZB784-C9V1 9F BZB784-C15 9L LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I continuous forward current - 200 mA F I non-repetitive peak reverse current t = 100 s square wave see Table 1 ZSM p T =25 C prior to surge amb P total power dissipation note 1 T =25 C 2 diodes loaded - 350 mW tot amb T =25 C 1 diode loaded - 180 mW amb P non-repetitive peak reverse t = 100 s square wave - 40 W ZSM p dissipation T =25 C prior to surge amb T storage temperature - 65 +150 C stg T junction temperature - 150 C j Note 1. Device mounted on an FR4 printed-circuit board. 2001 Feb 27 2